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Title: Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Abstract

Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on {gamma}-LiAlO{sub 2} by metal organic vapor phase epitaxy.

Authors:
; ; ; ; ;  [1]; ;  [2]; ;  [3]; ;  [2];  [4];  [5]
  1. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)
  2. GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany)
  3. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
  4. AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)
  5. Aunt Daisy Scientific Ltd., Claremont House, High St., Lydney, Gloucestershire GL15 5DX (United Kingdom)
Publication Date:
OSTI Identifier:
22162840
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS; ELECTRON CHANNELING; GALLIUM NITRIDES; INDIUM COMPOUNDS; LAYERS; ORGANOMETALLIC COMPOUNDS; QUANTUM WELLS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; STACKING FAULTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY

Citation Formats

Naresh-Kumar, G., Kraeusel, S., Bruckbauer, J., Edwards, P. R., Hourahine, B., Trager-Cowan, C., Mauder, C., Heuken, M., AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath, Wang, K. R., Trampert, A., Kalisch, H., Vescan, A., Giesen, C., and Day, A. P. Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope. United States: N. p., 2013. Web. doi:10.1063/1.4801469.
Naresh-Kumar, G., Kraeusel, S., Bruckbauer, J., Edwards, P. R., Hourahine, B., Trager-Cowan, C., Mauder, C., Heuken, M., AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath, Wang, K. R., Trampert, A., Kalisch, H., Vescan, A., Giesen, C., & Day, A. P. Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope. United States. https://doi.org/10.1063/1.4801469
Naresh-Kumar, G., Kraeusel, S., Bruckbauer, J., Edwards, P. R., Hourahine, B., Trager-Cowan, C., Mauder, C., Heuken, M., AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath, Wang, K. R., Trampert, A., Kalisch, H., Vescan, A., Giesen, C., and Day, A. P. 2013. "Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope". United States. https://doi.org/10.1063/1.4801469.
@article{osti_22162840,
title = {Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope},
author = {Naresh-Kumar, G. and Kraeusel, S. and Bruckbauer, J. and Edwards, P. R. and Hourahine, B. and Trager-Cowan, C. and Mauder, C. and Heuken, M. and AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath and Wang, K. R. and Trampert, A. and Kalisch, H. and Vescan, A. and Giesen, C. and Day, A. P.},
abstractNote = {Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on {gamma}-LiAlO{sub 2} by metal organic vapor phase epitaxy.},
doi = {10.1063/1.4801469},
url = {https://www.osti.gov/biblio/22162840}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 102,
place = {United States},
year = {Mon Apr 08 00:00:00 EDT 2013},
month = {Mon Apr 08 00:00:00 EDT 2013}
}