Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

Journal Article · Mon Jan 14 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4788728· OSTI ID:22162670

Akiyama, Morito; Nagase, Toshimi ^[1]; Umeda, Keiichi; Honda, Atsushi ^[2]

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1. Measurement Solution Research Center, National Institute of Advanced Industrials Science and Technology, Tosu, Saga 841-0052 (Japan)
2. Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555 (Japan)

The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (Sc{sub x}Al{sub 1-x}N) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc{sub 0.41}Al{sub 0.59}N film was 67 GPa, indicating that the FOM is five times larger than that of AlN. The FOM of Sc{sub 0.41}Al{sub 0.59}N film is higher than those of lead zirconate titanate and Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc{sub 0.41}Al{sub 0.59}N film is due to the high d{sub 31} and the low relative permittivity.

• OSTI ID: 22162670
• Journal Information: Applied Physics Letters, Vol. 102, Issue 2; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CHEMICAL ANALYSIS
DEPOSITION
LEAD COMPOUNDS
PERMITTIVITY
PIEZOELECTRICITY
POWER GENERATION
PRESSURE RANGE GIGA PA
SCANDIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS
TITANATES
X RADIATION
ZIRCONATES