Impurity trapped exciton states related to rare earth ions in crystals under high hydrostatic pressure
- University of Gdan'sk, Institute of Experimental Physics (Poland)
Emission related to rare earth ions in solids takes place usually due to 4f{sup n} {yields} 4f{sup n} and 4f{sup n-1}5d{sup 1} {yields} 4f{sup n} internal transitions. In the case of band to band excitation the effective energy transfer from the host to optically active impurity is required. Among other processes one of the possibilities is capturing of the electron at excited state and hole at the ground state of impurity. Localization of electron or hole at the dopand site creates a long range Coulomb potential that attracts the second carrier which then occupies the localized Rydberg-like states. Such a system can be considered as impurity trapped exciton. Usually impurity trapped exciton is a short living phenomenon which decays non-radiatively leaving the impurity ion in the excited state. However, in several compounds doped with Eu{sup 2+} the impurity trapped exciton states become stable and contribute to the radiative processes though anomalous luminescence that appears apart of the 4f{sup 7} {yields} 4f{sup 7} and 4f{sup 7}5d{sup 1} {yields} 5f{sup 7} emission. In this contribution pressure effect on energies of the 4f{sup n-1}5d{sup 1}{yields}5f{sup n} transitions in Ln doped oxides and fluorides as well as influence of pressure on the energy of impurity trapped exciton states is discussed. The latest results on high pressure investigations of luminescence related to Pr{sup 3+}, and Eu{sup 2+} in different lattices are reviewed.
- OSTI ID:
- 22156460
- Journal Information:
- Crystallography Reports, Vol. 58, Issue 1; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
- Country of Publication:
- United States
- Language:
- English
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