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Title: Anisotropic thermal properties of the polar crystal Cs{sub 2}TeMo{sub 3}O{sub 12}

Abstract

A Cs{sub 2}TeMo{sub 3}O{sub 12} single crystal with dimensions of 17 mm Multiplication-Sign 17 mm Multiplication-Sign 18 mm was grown using the top-seeded solution growth method. Thermal properties, including thermal expansion, specific heat, thermal diffusivity and thermal conductivity, were investigated as a function of temperature. The average linear thermal expansion coefficients along different crystallographic directions were measured to be {alpha}{sub a}=7.34 Multiplication-Sign 10{sup -6} K{sup -1} and {alpha}{sub c}=32.02 Multiplication-Sign 10{sup -6} K{sup -1} over the temperature range of 30-430 Degree-Sign C. The specific heat was measured to be 0.400-0.506 J g{sup -1} K{sup -1} from 22 Degree-Sign C to 440 Degree-Sign C. The thermal conductivity was calculated to be 1.86 and 0.76 W m{sup -1} K{sup -1} at 22 Degree-Sign C along the a and c axes, respectively. With increasing temperature from 22 to 430 Degree-Sign C, the thermal conductivity decreases by 33.0% along the a axis, while it decreases by 18.5% below 200 Degree-Sign C and then remains unchanged along the c axis. The relationship between structure and the thermal properties is also discussed. - Graphical Abstract: Centimeter-sized crystals of polar Cs{sub 2}TeMo{sub 3}O{sub 12} were grown using the top-seeded solution growth method. The relative large anisotropy inmore » thermal expansion and thermal conductivity of Cs{sub 2}TeMo{sub 3}O{sub 12} is attributable to its layered structure. Highlights: Black-Right-Pointing-Pointer Cs{sub 2}TeMo{sub 3}O{sub 12} single crystals with dimensions of 17 Multiplication-Sign 17 Multiplication-Sign 18 mm{sup 3} were grown. Black-Right-Pointing-Pointer Thermal properties of Cs{sub 2}TeMo{sub 3}O{sub 12} were studied as a function of temperature. Black-Right-Pointing-Pointer The thermal expansion anisotropy of Cs{sub 2}TeMo{sub 3}O{sub 12} is explained using its structure. Black-Right-Pointing-Pointer To protect Cs{sub 2}TeMo{sub 3}O{sub 12} crystal, a small cooling rate should be used during growth. Black-Right-Pointing-Pointer A large temperature gradient should be avoided during processing and application.« less

Authors:
; ; ;  [1];  [1]
  1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong (China)
Publication Date:
OSTI Identifier:
22149894
Resource Type:
Journal Article
Journal Name:
Journal of Solid State Chemistry
Additional Journal Information:
Journal Volume: 195; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0022-4596
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; CRYSTAL GROWTH; CRYSTALLOGRAPHY; MONOCRYSTALS; SPECIFIC HEAT; TEMPERATURE DEPENDENCE; TEMPERATURE GRADIENTS; THERMAL CONDUCTIVITY; THERMAL DIFFUSIVITY; THERMAL EXPANSION

Citation Formats

Zhang, Junjie, Zhang, Zhonghan, Sun, Youxuan, Zhang, Chengqian, and Tao, Xutang, E-mail: txt@icm.sdu.edu.cn. Anisotropic thermal properties of the polar crystal Cs{sub 2}TeMo{sub 3}O{sub 12}. United States: N. p., 2012. Web. doi:10.1016/J.JSSC.2011.12.022.
Zhang, Junjie, Zhang, Zhonghan, Sun, Youxuan, Zhang, Chengqian, & Tao, Xutang, E-mail: txt@icm.sdu.edu.cn. Anisotropic thermal properties of the polar crystal Cs{sub 2}TeMo{sub 3}O{sub 12}. United States. doi:10.1016/J.JSSC.2011.12.022.
Zhang, Junjie, Zhang, Zhonghan, Sun, Youxuan, Zhang, Chengqian, and Tao, Xutang, E-mail: txt@icm.sdu.edu.cn. Thu . "Anisotropic thermal properties of the polar crystal Cs{sub 2}TeMo{sub 3}O{sub 12}". United States. doi:10.1016/J.JSSC.2011.12.022.
@article{osti_22149894,
title = {Anisotropic thermal properties of the polar crystal Cs{sub 2}TeMo{sub 3}O{sub 12}},
author = {Zhang, Junjie and Zhang, Zhonghan and Sun, Youxuan and Zhang, Chengqian and Tao, Xutang, E-mail: txt@icm.sdu.edu.cn},
abstractNote = {A Cs{sub 2}TeMo{sub 3}O{sub 12} single crystal with dimensions of 17 mm Multiplication-Sign 17 mm Multiplication-Sign 18 mm was grown using the top-seeded solution growth method. Thermal properties, including thermal expansion, specific heat, thermal diffusivity and thermal conductivity, were investigated as a function of temperature. The average linear thermal expansion coefficients along different crystallographic directions were measured to be {alpha}{sub a}=7.34 Multiplication-Sign 10{sup -6} K{sup -1} and {alpha}{sub c}=32.02 Multiplication-Sign 10{sup -6} K{sup -1} over the temperature range of 30-430 Degree-Sign C. The specific heat was measured to be 0.400-0.506 J g{sup -1} K{sup -1} from 22 Degree-Sign C to 440 Degree-Sign C. The thermal conductivity was calculated to be 1.86 and 0.76 W m{sup -1} K{sup -1} at 22 Degree-Sign C along the a and c axes, respectively. With increasing temperature from 22 to 430 Degree-Sign C, the thermal conductivity decreases by 33.0% along the a axis, while it decreases by 18.5% below 200 Degree-Sign C and then remains unchanged along the c axis. The relationship between structure and the thermal properties is also discussed. - Graphical Abstract: Centimeter-sized crystals of polar Cs{sub 2}TeMo{sub 3}O{sub 12} were grown using the top-seeded solution growth method. The relative large anisotropy in thermal expansion and thermal conductivity of Cs{sub 2}TeMo{sub 3}O{sub 12} is attributable to its layered structure. Highlights: Black-Right-Pointing-Pointer Cs{sub 2}TeMo{sub 3}O{sub 12} single crystals with dimensions of 17 Multiplication-Sign 17 Multiplication-Sign 18 mm{sup 3} were grown. Black-Right-Pointing-Pointer Thermal properties of Cs{sub 2}TeMo{sub 3}O{sub 12} were studied as a function of temperature. Black-Right-Pointing-Pointer The thermal expansion anisotropy of Cs{sub 2}TeMo{sub 3}O{sub 12} is explained using its structure. Black-Right-Pointing-Pointer To protect Cs{sub 2}TeMo{sub 3}O{sub 12} crystal, a small cooling rate should be used during growth. Black-Right-Pointing-Pointer A large temperature gradient should be avoided during processing and application.},
doi = {10.1016/J.JSSC.2011.12.022},
journal = {Journal of Solid State Chemistry},
issn = {0022-4596},
number = ,
volume = 195,
place = {United States},
year = {2012},
month = {11}
}