Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub 3}-type structure
- Department of Chemistry, Faculty of Science, Gakushuin University, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588 (Japan)
- Department of Chemistry, University of Houston, Houston, TX 77204-5003 (United States)
The dielectric properties of a polar LiNbO{sub 3}-type ZnSnO{sub 3} synthesized under high-pressure have been investigated with respect to the dielectric permittivity in the relative low frequency range of 10 kHz to 1 MHz and the SHG response at an optical frequency. The small temperature dependence of dielectric permittivity without anomaly was observed in the temperature range of 300 K to 780 K. LiNbO{sub 3}-type ZnSnO{sub 3} exhibits the maximum SHG efficiency of approximately 50 times that of quartz. We then compare the structure and SHG response with those of iso-structural LiNbO{sub 3} and other known LiNbO{sub 3}-type oxides. It was found that the magnitude of SHG response is correlated to the magnitude of intra-octahedral distortion, which is effectively brought by the second-order Jahn-Teller effect. - Graphical abstract: A polar LiNbO{sub 3} (LN)-type ZnSnO{sub 3} exhibits the maximum second harmonic generation (SHG) efficiency of approximately 50 times that of quartz. The magnitude of SHG response in LN-type oxides, ABO{sub 3} is correlated to the magnitude of intra-octahedral distortion. Highlights: Black-Right-Pointing-Pointer A polar LiNbO{sub 3}(LN)-type ZnSnO{sub 3} was synthesized under high-pressure. Black-Right-Pointing-Pointer The dielectric permittivity and second harmonic generation (SHG) response was investigated. Black-Right-Pointing-Pointer LN-type ZnSnO{sub 3} exhibits the maximum SHG efficiency of approximately 50 times that of quartz. Black-Right-Pointing-Pointer The SHG response in LN-type oxides is correlated to the magnitude of intra-octahedral distortion.
- OSTI ID:
- 22149893
- Journal Information:
- Journal of Solid State Chemistry, Vol. 195; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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