Quasi-zero lattice mismatch and band alignment of BaTiO{sub 3} on epitaxial (110)Ge

Journal Article · Sun Jul 14 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4813226· OSTI ID:22122804

Hudait, M. K.; Zhu, Y.; Jain, N. ^[1]; Maurya, D.; Zhou, Y.; Priya, S ^[2]

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1. Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)
2. Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

Growth, structural, and band alignment properties of pulsed laser deposited amorphous BaTiO{sub 3} on epitaxial molecular beam epitaxy grown (110)Ge layer, as well as their utilization in low power transistor are reported. High-resolution x-ray diffraction demonstrated quasi-zero lattice mismatch of BaTiO{sub 3} on (110)Ge. Cross-sectional transmission electron microscopy micrograph confirms the amorphous nature of BaTiO{sub 3} layer as well as shows a sharp heterointerface between BaTiO{sub 3} and Ge with no traceable interfacial layer. The valence band offset, {Delta}E{sub v}, of 1.99 {+-} 0.05 eV at the BaTiO{sub 3}/(110)Ge heterointerface is measured using x-ray photoelectron spectroscopy. The conduction band offset, {Delta}E{sub c}, of 1.14 {+-} 0.1 eV is calculated using the bandgap energies of BaTiO{sub 3} of 3.8 eV and Ge of 0.67 eV. These band offset parameters for carrier confinement and the interface chemical properties of the BaTiO{sub 3}/(110)Ge system are significant advancement towards designing Ge-based p-and n-channel metal-oxide semiconductor field-effect transistors for low-power application.

• OSTI ID: 22122804
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 2; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
BARIUM COMPOUNDS
CRYSTAL DEFECTS
ELECTRON MOBILITY
ENERGY BEAM DEPOSITION
ENERGY GAP
FIELD EFFECT TRANSISTORS
INTERFACES
LASER RADIATION
LAYERS
MOLECULAR BEAM EPITAXY
PULSED IRRADIATION
PULSES
RESOLUTION
SEMICONDUCTOR MATERIALS
TITANATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY