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Title: Persistent photoconductivity and electron mobility in In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP quantum-well structures

Abstract

The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersub-band electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed, which is explained by the spatial separation of photoexcited charge carriers.

Authors:
;  [1];  [2]; ;  [3]
  1. Moscow State University, Department of Low-Temperature Physics and Superconductivity (Russian Federation)
  2. National Research Nuclear University MEPhI (Russian Federation)
  3. Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22121704
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CHARGE CARRIERS; ELECTRON MOBILITY; ELECTRONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; PHOTOCONDUCTIVITY; QUANTUM WELLS; SCATTERING; SHUBNIKOV-DE HAAS EFFECT; TEMPERATURE RANGE 0065-0273 K

Citation Formats

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Lunin, R. A., Yuzeeva, N. A., Vasilievskii, I. S., Galiev, G. B., and Klimov, E. A. Persistent photoconductivity and electron mobility in In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP quantum-well structures. United States: N. p., 2013. Web. doi:10.1134/S1063782613070130.
Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Lunin, R. A., Yuzeeva, N. A., Vasilievskii, I. S., Galiev, G. B., & Klimov, E. A. Persistent photoconductivity and electron mobility in In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP quantum-well structures. United States. https://doi.org/10.1134/S1063782613070130
Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Lunin, R. A., Yuzeeva, N. A., Vasilievskii, I. S., Galiev, G. B., and Klimov, E. A. 2013. "Persistent photoconductivity and electron mobility in In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP quantum-well structures". United States. https://doi.org/10.1134/S1063782613070130.
@article{osti_22121704,
title = {Persistent photoconductivity and electron mobility in In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP quantum-well structures},
author = {Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru and Lunin, R. A. and Yuzeeva, N. A. and Vasilievskii, I. S. and Galiev, G. B. and Klimov, E. A.},
abstractNote = {The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersub-band electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed, which is explained by the spatial separation of photoexcited charge carriers.},
doi = {10.1134/S1063782613070130},
url = {https://www.osti.gov/biblio/22121704}, journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 47,
place = {United States},
year = {Mon Jul 15 00:00:00 EDT 2013},
month = {Mon Jul 15 00:00:00 EDT 2013}
}