The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection
- Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China)
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 300 (China)
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)
The potential of utilizing the ultra-nanocrystalline (UNCD) films for detecting the Au-ion irradiation was investigated. When the fluence for Au-ion irradiation is lower than the critical value (f{sub c}= 5.0 Multiplication-Sign 10{sup 12} ions/cm{sup 2}) the turn-on field for electron field emission (EFE) process of the UNCD films decreased systematically with the increase in fluence that is correlated with the increase in sp{sup 2}-bonded phase ({pi}{sup *}-band in EELS) due to the Au-ion irradiation. The EFE properties changed irregularly, when the fluence for Au-ion irradiation exceeds this critical value. The transmission electron microscopic microstructural examinations, in conjunction with EELS spectroscopic studies, reveal that the structural change preferentially occurred in the diamond-to-Si interface for the samples experienced over critical fluence of Au-ion irradiation, viz. the crystalline SiC phase was induced in the interfacial region and the thickness of the interface decreased. These observations implied that the UNCD films could be used as irradiation detectors when the fluence for Au-ion irradiation does not exceed such a critical value.
- OSTI ID:
- 22118632
- Journal Information:
- AIP Advances, Vol. 3, Issue 6; Other Information: (c) 2013 Copyright-Sign 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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