Characterization of metal oxide layers grown on CVD graphene

Journal Article · Fri Mar 15 00:00:00 EDT 2013 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4792068· OSTI ID:22116032

Matsubayashi, Akitomo; Abel, Joseph; Prasad Sinha, Dhiraj; Lee, Ji Ung; LaBella, Vincent P. ^[1]

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1. College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203 (United States)

Growth of a fully oxidized aluminum oxide layer with low surface roughness on graphene grown by chemical vapor deposition is demonstrated. This is accomplished by the deposition of a 0.2 nm thick titanium seed layer on the graphene prior to the deposition of the aluminum under ultra high vacuum conditions, which was subsequently oxidized. The stoichiometry and surface roughness of the oxide layers were measured for a range of titanium and aluminum depositions utilizing ex situ x-ray photoelectron spectrometry and atomic force microscopy. These fully oxidized films are expected to produce good dielectric layers for use in graphene based electronic devices.

• OSTI ID: 22116032
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 2; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
GRAPHENE
OXIDATION
ROUGHNESS
STOICHIOMETRY
THIN FILMS
TITANIUM
VACUUM COATING
X-RAY PHOTOELECTRON SPECTROSCOPY