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Title: Aging and annealing effects on properties of Ag-N dual-acceptor doped ZnO thin films

Abstract

Ag-N dual acceptor doping into ZnO has been proposed to realize p-ZnO thin film of different concentrations (1, 2 and 4 at.%) by spray pyrolysis at 623 K and then 4 at.% films annealed at 673 K and 723 K for 1 hr. X-ray diffraction studies reveal that all the films are preferentially oriented along (002) plane. Energy dispersive spectroscopy (EDS) confirms the presence of Ag and N in 2 at.% ZnO:(Ag, N) film. Hall measurement shows that 4 at.% ZnO:(Ag, N) film achieved minimum resistivity with high hole concentration. The p-type conductivity of the ZnO:(Ag, N) films is retained even after 180 days. Photoluminescence (PL) spectra of ZnO:(Ag, N) films show low density of native defects.

Authors:
; ;  [1]
  1. Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli -620 015 (India)
Publication Date:
OSTI Identifier:
22116018
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1512; Journal Issue: 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; AGING; ANNEALING; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; HALL EFFECT; HOLES; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILVER; THIN FILMS; X-RAY DIFFRACTION; X-RAY FLUORESCENCE ANALYSIS; ZINC OXIDES

Citation Formats

Swapna, R., Amiruddin, R., and Santhosh Kumar, M. C. Aging and annealing effects on properties of Ag-N dual-acceptor doped ZnO thin films. United States: N. p., 2013. Web. doi:10.1063/1.4791221.
Swapna, R., Amiruddin, R., & Santhosh Kumar, M. C. Aging and annealing effects on properties of Ag-N dual-acceptor doped ZnO thin films. United States. doi:10.1063/1.4791221.
Swapna, R., Amiruddin, R., and Santhosh Kumar, M. C. Tue . "Aging and annealing effects on properties of Ag-N dual-acceptor doped ZnO thin films". United States. doi:10.1063/1.4791221.
@article{osti_22116018,
title = {Aging and annealing effects on properties of Ag-N dual-acceptor doped ZnO thin films},
author = {Swapna, R. and Amiruddin, R. and Santhosh Kumar, M. C.},
abstractNote = {Ag-N dual acceptor doping into ZnO has been proposed to realize p-ZnO thin film of different concentrations (1, 2 and 4 at.%) by spray pyrolysis at 623 K and then 4 at.% films annealed at 673 K and 723 K for 1 hr. X-ray diffraction studies reveal that all the films are preferentially oriented along (002) plane. Energy dispersive spectroscopy (EDS) confirms the presence of Ag and N in 2 at.% ZnO:(Ag, N) film. Hall measurement shows that 4 at.% ZnO:(Ag, N) film achieved minimum resistivity with high hole concentration. The p-type conductivity of the ZnO:(Ag, N) films is retained even after 180 days. Photoluminescence (PL) spectra of ZnO:(Ag, N) films show low density of native defects.},
doi = {10.1063/1.4791221},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1512,
place = {United States},
year = {2013},
month = {2}
}