Optical properties change of Ge{sub 12.5}Sb{sub 25}Se{sub 62.5} thin films by laser irradiation

Journal Article · Tue Feb 05 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4791191· OSTI ID:22116012

Naik, Ramakanta ^[1]; Vinod, E. M.; Kumar, C.; Ganesan, R. ^[2]

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1. Physics Department, Utkal University, Bhubaneswar, Odisha, 751004 (India) and Physics Department, Indian Institute of Science, Bangalore, 560012 (India)
2. Physics Department, Indian Institute of Science, Bangalore, 560012 (India)

The thermally evaporated Ge{sub 12.5}Sb{sub 25}Se{sub 62.5} thin films of 800 nm thickness were subjected to light exposure for photo induced studies. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy. The optical band gap was increased due to photo induced effects along with the decrease in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra supports the optical changes happening in the film due to light exposure.

• OSTI ID: 22116012
• Journal Information: AIP Conference Proceedings, Vol. 1512, Issue 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ANTIMONY SELENIDES
CHEMICAL BONDS
DENSITY
FOURIER TRANSFORMATION
GERMANIUM COMPOUNDS
GLASS
INFRARED SPECTRA
LASER RADIATION
OPTICAL PROPERTIES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
THIN FILMS
VISIBLE RADIATION
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY