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Title: 175 MeV Au{sup +13} ion irradiation induced structural and morphological modifications in zinc oxide thin films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4791102· OSTI ID:22115997
 [1];  [2]; ;  [3];  [4]
  1. Materials Science Research Laboratory, Department of Physics, S. V. College, Aligarh 202001, UP (India)
  2. Materials Science Research Laboratory, Department of Physics, S. V. College, Aligarh 202001, UP (India) and Department of Applied Sciences and Humanities, Krishna Institute of Engineering and Technology, Ghaziabad-201206, U.P. (India)
  3. Materials Science Research Laboratory, Department of Physics, S. V. College, Aligarh 202001, UP (India) and Department of Applied Sciences and Humanities, Krishna Institute of Engineering and Technolog (India)
  4. School of Nano and Advanced Materials Engineering, Changwon National University, 9 Sarim-dong, Changwon- 641-773 (Korea, Republic of)

Thin films of ZnO were deposited, on Si substrates, using the RF-sputtering technique and irradiated by the 175 MeV Au{sup +13} beams. The structural changes were investigated by x-ray diffraction (XRD) measurements. The particle size found to increase with the increasing ion fluence up to 1 Multiplication-Sign 10{sup 12} ion/cm{sup 2}. At highest irradiation fluence of 5 Multiplication-Sign 10{sup 12} ion/cm{sup 2} the average particle size decreases. The Raman spectroscopy measurements were performed to understand the local phonon mode of the samples. The surface morphology of the as-deposited and irradiated thin films is measured by the Atomic Force Microscopy (AFM).

OSTI ID:
22115997
Journal Information:
AIP Conference Proceedings, Vol. 1512, Issue 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English