High resolution TOF - SIMS depth profiling of nano-film multilayers

Bhushan, K. G.; Mukundhan, R.; Gupta, S. K.

doi:10.1063/1.4791220

Title: High resolution TOF - SIMS depth profiling of nano-film multilayers

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Abstract

We present the results of depth profiling studies conducted using an indigenously developed dual-beam high resolution Time-of-Flight Secondary Ion Mass Spectrometer (TOF-SIMS) on thinfilm W-C-W multilayer structure grown on Si substrate. Opto 8 layers could be clearly identified. Mixing of layers is seen which from analysis using roughness model calculations indicate a mixing thickness of about 2nm that correspond to the escape depth of secondary ions from the sample.

Authors:

Bhushan, K. G.; Mukundhan, R.; Gupta, S. K. ^[1]

Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

Publication Date:: Tue Feb 05 00:00:00 EST 2013

OSTI Identifier:: 22113516

Resource Type:: Journal Article

Journal Name:: AIP Conference Proceedings

Additional Journal Information:: Journal Volume: 1512; Journal Issue: 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CARBON; DEPTH; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTRA; MASS SPECTROSCOPY; MIXING; NANOSTRUCTURES; RESOLUTION; ROUGHNESS; SILICON; SUBSTRATES; SURFACES; THICKNESS; THIN FILMS; TIME-OF-FLIGHT METHOD; TUNGSTEN

Citation Formats


                    Bhushan, K. G., Mukundhan, R., and Gupta, S. K. High resolution TOF - SIMS depth profiling of nano-film multilayers.  United States: N. p., 2013. 
        Web.  doi:10.1063/1.4791220.

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                    Bhushan, K. G., Mukundhan, R., & Gupta, S. K. High resolution TOF - SIMS depth profiling of nano-film multilayers.  United States.  https://doi.org/10.1063/1.4791220

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                    Bhushan, K. G., Mukundhan, R., and Gupta, S. K. 2013.  
        "High resolution TOF - SIMS depth profiling of nano-film multilayers".  United States.  https://doi.org/10.1063/1.4791220.

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@article{osti_22113516,

  title        = {High resolution TOF - SIMS depth profiling of nano-film multilayers},

  author       = {Bhushan, K. G. and Mukundhan, R. and Gupta, S. K.},

  abstractNote = {We present the results of depth profiling studies conducted using an indigenously developed dual-beam high resolution Time-of-Flight Secondary Ion Mass Spectrometer (TOF-SIMS) on thinfilm W-C-W multilayer structure grown on Si substrate. Opto 8 layers could be clearly identified. Mixing of layers is seen which from analysis using roughness model calculations indicate a mixing thickness of about 2nm that correspond to the escape depth of secondary ions from the sample.},

  doi          = {10.1063/1.4791220},

  url          = {https://www.osti.gov/biblio/22113516},
  journal      = {AIP Conference Proceedings},

  issn         = {0094-243X},

  number       = 1,

  volume       = 1512,

  place        = {United States},

  year         = {Tue Feb 05 00:00:00 EST 2013},

  month        = {Tue Feb 05 00:00:00 EST 2013}

}

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https://doi.org/10.1063/1.4791220

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