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Title: Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

Abstract

The distribution of hydrostatic strains in Bi{sup 3+}-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi {yields} As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.

Authors:
 [1];  [1];  [2];  [1]
  1. Franko State Pedagogical University (Ukraine)
  2. Lviv National Polytechnic University (Ukraine)
Publication Date:
OSTI Identifier:
22105546
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 47; Journal Issue: 3; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH IONS; DEFORMATION; DOPED MATERIALS; GALLIUM ARSENIDES; IMPURITIES; INDIUM ARSENIDES; MORPHOLOGY; QUANTUM DOTS; STRAINS

Citation Formats

Peleshchak, R. M., Guba, S. K., E-mail: gubask@polynet.lviv.ua, Kuzyk, O. V., Kurilo, I. V., and Dankiv, O. O. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices. United States: N. p., 2013. Web. doi:10.1134/S1063782613030196.
Peleshchak, R. M., Guba, S. K., E-mail: gubask@polynet.lviv.ua, Kuzyk, O. V., Kurilo, I. V., & Dankiv, O. O. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices. United States. doi:10.1134/S1063782613030196.
Peleshchak, R. M., Guba, S. K., E-mail: gubask@polynet.lviv.ua, Kuzyk, O. V., Kurilo, I. V., and Dankiv, O. O. Fri . "Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices". United States. doi:10.1134/S1063782613030196.
@article{osti_22105546,
title = {Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices},
author = {Peleshchak, R. M. and Guba, S. K., E-mail: gubask@polynet.lviv.ua and Kuzyk, O. V. and Kurilo, I. V. and Dankiv, O. O.},
abstractNote = {The distribution of hydrostatic strains in Bi{sup 3+}-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi {yields} As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.},
doi = {10.1134/S1063782613030196},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 47,
place = {United States},
year = {2013},
month = {3}
}