On the electrically detected cyclotron resonance of holes in silicon nanostructures
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
The cyclotron resonance in semiconductor nanostructures is electrically detected for the first time without an external cavity, a source, and a detector of microwave radiation. An ultranarrow p-Si quantum well on an n-Si (100) surface confined by superconducting heavily boron-doped {delta}-shaped barriers is used as the object of investigation and provides microwave generation within the framework of the nonstationary Josephson effect. The cyclotron resonance is detected upon the presence of a microcavity, which is incorporated into the quantum-well plane, by measuring the longitudinal magnetoresistance under conditions of stabilization of the source-drain current. The cyclotron-resonance spectra and their angular dependences measured in a low magnetic field identify small values of the effective mass of light and heavy holes in various 2D subbands due to the presence of edge channels with a high mobility of carriers.
- OSTI ID:
- 22105525
- Journal Information:
- Semiconductors, Vol. 47, Issue 4; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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