Phase selective growth and characterization of vanadium dioxide films on silicon substrates

Watanabe, Tomo; Okimura, Kunio; Hajiri, Tetsuya; Kimura, Shin-ichi; Sakai, Joe

doi:10.1063/1.4802652

Title: Phase selective growth and characterization of vanadium dioxide films on silicon substrates

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Abstract

We report on selective growth of VO{sub 2} films with M1, M2, and intermediate T phases on silicon (Si) substrates by using inductively coupled plasma (ICP)-assisted sputtering (ICPS) under particular conditions. The film composed of M2 phase was proved to be under strong in-plane compressive stress, which is consistent with stress-induced M2 phase. Crystalline structural phase transition (SPT) properties of these films were demonstrated together with infrared light transmittance as a measure of insulator-metal transition (IMT) against temperature. Characteristic correlations between SPT and IMT for films with M2 and intermediate-T phases were reported. Ultraviolet photoelectron spectroscopy measurements probed an energy gap of the film in the M2 phase at around 0.4 eV from the Fermi level indicating the presence of a Mott gap.

Authors:

Watanabe, Tomo; Okimura, Kunio ^[1]; Hajiri, Tetsuya; Kimura, Shin-ichi ^[2]; Sakai, Joe ^[3]

School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan)
UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585 (Japan)
GREMAN, UMR 7347 CNRS, Universite Francois Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)

Publication Date:: Sun Apr 28 00:00:00 EDT 2013

OSTI Identifier:: 22102365

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 113; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CORRELATIONS; CRYSTAL-PHASE TRANSFORMATIONS; ENERGY GAP; FERMI LEVEL; METALS; PHOTOELECTRON SPECTROSCOPY; PLASMA; SILICON; SOLIDS; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION; VANADIUM OXIDES

Citation Formats


                    Watanabe, Tomo, Okimura, Kunio, Hajiri, Tetsuya, Kimura, Shin-ichi, and Sakai, Joe. Phase selective growth and characterization of vanadium dioxide films on silicon substrates.  United States: N. p., 2013. 
        Web.  doi:10.1063/1.4802652.

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                    Watanabe, Tomo, Okimura, Kunio, Hajiri, Tetsuya, Kimura, Shin-ichi, & Sakai, Joe. Phase selective growth and characterization of vanadium dioxide films on silicon substrates.  United States.  https://doi.org/10.1063/1.4802652

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                    Watanabe, Tomo, Okimura, Kunio, Hajiri, Tetsuya, Kimura, Shin-ichi, and Sakai, Joe. 2013.  
        "Phase selective growth and characterization of vanadium dioxide films on silicon substrates".  United States.  https://doi.org/10.1063/1.4802652.

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@article{osti_22102365,

  title        = {Phase selective growth and characterization of vanadium dioxide films on silicon substrates},

  author       = {Watanabe, Tomo and Okimura, Kunio and Hajiri, Tetsuya and Kimura, Shin-ichi and Sakai, Joe},

  abstractNote = {We report on selective growth of VO{sub 2} films with M1, M2, and intermediate T phases on silicon (Si) substrates by using inductively coupled plasma (ICP)-assisted sputtering (ICPS) under particular conditions. The film composed of M2 phase was proved to be under strong in-plane compressive stress, which is consistent with stress-induced M2 phase. Crystalline structural phase transition (SPT) properties of these films were demonstrated together with infrared light transmittance as a measure of insulator-metal transition (IMT) against temperature. Characteristic correlations between SPT and IMT for films with M2 and intermediate-T phases were reported. Ultraviolet photoelectron spectroscopy measurements probed an energy gap of the film in the M2 phase at around 0.4 eV from the Fermi level indicating the presence of a Mott gap.},

  doi          = {10.1063/1.4802652},

  url          = {https://www.osti.gov/biblio/22102365},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 16,

  volume       = 113,

  place        = {United States},

  year         = {Sun Apr 28 00:00:00 EDT 2013},

  month        = {Sun Apr 28 00:00:00 EDT 2013}

}

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