Maskless implants of 20 keV Ga{sup +} in thin crystalline silicon on insulator

Journal Article · Mon Jan 28 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4789625· OSTI ID:22102246

Mio, A. M.; D'Arrigo, G.; Rimini, E.; Spinella, C. ^[1]; Milazzo, R. G. ^[1]; Peto, L.; Nadzeyka, A.; Bauerdick, S. ^[2]

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1. IMM-CNR, Strada VIII 5, Zona Industriale, I-95121 Catania (Italy)
2. Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund (Germany)

A nano-sized ion beam apparatus has been used as maskless lithography to implant 20 keV Ga{sup +} ions into a 26 nm thick silicon crystalline film on insulator. The ion beam, with about 5 nm standard deviation, delivered few hundred ions during a single shot. Circular areas with nominal diameter of 20 or 50 nm were irradiated to a fluence of 5 Multiplication-Sign 10{sup 14}/cm{sup 2}. Transmission electron microscopy evidenced that the damaged regions are characterized by an irregular contour with many disordered filaments. Damage extends across the layer thickness and fast Fourier transform analysis indicates that implantation causes the amorphization of a region which extends beyond the nominal diameter. In situ annealing experiments demonstrated that the disordered filamentary regions disappear in the 250-450 Degree-Sign C temperature range and the interfaces with the surrounding crystalline regions sharpen. A temperature as high as 600 Degree-Sign C is required to fully re-crystallize the amorphous core of the implanted dots. Reordering occurs by multi-orientation lateral solid-phase epitaxial growth and the breaking of (111) and (101) interfaces, due to the formation of twins, triggers a fast crystallization kinetics. Rapid thermal annealing (890 Degree-Sign C-10 s) completely crystallizes the amorphous regions, twins are absent and small cluster of defects remains instead. Preliminary scanning capacitance measurements indicate that the implanted atoms, after crystallization, are electrically active. The implant method is then a viable processing step for the doping of non-bulk fully depleted ultra-thin-body MOSFET.

• OSTI ID: 22102246
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 4; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
AMORPHOUS STATE
ANNEALING
CAPACITANCE
CRYSTAL DEFECTS
CRYSTALLIZATION
EPITAXY
FILAMENTS
FILMS
GALLIUM IONS
INTERFACES
ION BEAMS
ION IMPLANTATION
KEV RANGE 10-100
LAYERS
MOSFET
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS
SILICON
SOLIDS
TRANSMISSION ELECTRON MICROSCOPY