Precise measurement of the transverse piezoelectric coefficient for thin films on anisotropic substrate
- School of Mechanical Engineering, University of Ulsan, Ulsan, 680-749 (Korea, Republic of)
- Department of Micro-Engineering, Kyoto University, Kyoto, 606-8501 (Japan)
- Department of Mechanical Engineering, Kobe University, Kobe, 657-8501 (Japan)
In this study, we propose a reliable measurement method for the effective transverse piezoelectric coefficient for thin films especially on anisotropic substrate. This coefficient for piezoelectric Pb(Zr, Ti)O{sub 3} (PZT) thin films was calculated by measuring the electric field-induced tip displacement of unimorph cantilevers composed of PZT thin films and Si substrates. We evaluated the reliability of the proposed measurement method by comparing it with numerical analysis and confirmed that the relative error of the piezoelectric coefficient (e{sub 31,f}) was less than 1%. We prepared 16 different unimorph cantilevers composed of identical PZT films on different Si beam geometries that had various substrate thicknesses and cantilever widths. Although the effective transverse piezoelectric coefficient e{sub 31,f} of PZT thin films ranged from -6.5 to -14 C/m{sup 2} as a function of the applied voltage, the difference among the 16 samples with an applied voltage of 25 V was within 10%. These results demonstrate that the proposed measurement method has sufficient reliability and can be used to evaluate the effective transverse piezoelectric coefficient e{sub 31,f} of thin films.
- OSTI ID:
- 22102243
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 4; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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