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Title: Incoherent twin boundary migration induced by ion irradiation in Cu

Abstract

Grain boundaries can act as sinks for radiation-induced point defects. The sink capability is dependent on the atomic structures and varies with the type of point defects. Using high-resolution transmission electron microscopy, we observed that {Sigma}3{l_brace}112{r_brace} incoherent twin boundary (ITB) in Cu films migrates under Cu{sup 3+} ion irradiation. Using atomistic modeling, we found that {Sigma}3{l_brace}112{r_brace} ITB has the preferred sites for adsorbing interstitials and the preferential diffusion channels along the Shockley partial dislocations. Coupling with the high mobility of grain boundary Shockley dislocations within {Sigma}3{l_brace}112{r_brace} ITB, we infer that {Sigma}3{l_brace}112{r_brace} ITB migrates through the collective glide of grain boundary Shockley dislocations, driven by a concurrent reduction in the density of radiation-induced defects, which is demonstrated by the distribution of nearby radiation-induced defects.

Authors:
;  [1]; ;  [2];  [3];  [4]
  1. Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  2. Materials Science and Technology Division, MST-8, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  3. CEA, DEN, Service de Recherches de Metallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)
  4. Nebraska Center for Energy Sciences Research, University of Nebraska, Lincoln, Nebraska 68588 (United States)
Publication Date:
OSTI Identifier:
22102205
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 113; Journal Issue: 2; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ADSORPTION; CHARGED-PARTICLE TRANSPORT; COPPER IONS; COUPLING; CRYSTAL DEFECTS; DENSITY; DIFFUSION; DISLOCATIONS; DISTRIBUTION; GRAIN BOUNDARIES; INTERSTITIALS; ION BEAMS; IRRADIATION; MIGRATION; MOBILITY; PHYSICAL RADIATION EFFECTS; SIMULATION; THERMAL BARRIERS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Li, N., Misra, A., Wang, J., Wang, Y. Q., Serruys, Y., and Nastasi, M. Incoherent twin boundary migration induced by ion irradiation in Cu. United States: N. p., 2013. Web. doi:10.1063/1.4774242.
Li, N., Misra, A., Wang, J., Wang, Y. Q., Serruys, Y., & Nastasi, M. Incoherent twin boundary migration induced by ion irradiation in Cu. United States. https://doi.org/10.1063/1.4774242
Li, N., Misra, A., Wang, J., Wang, Y. Q., Serruys, Y., and Nastasi, M. 2013. "Incoherent twin boundary migration induced by ion irradiation in Cu". United States. https://doi.org/10.1063/1.4774242.
@article{osti_22102205,
title = {Incoherent twin boundary migration induced by ion irradiation in Cu},
author = {Li, N. and Misra, A. and Wang, J. and Wang, Y. Q. and Serruys, Y. and Nastasi, M.},
abstractNote = {Grain boundaries can act as sinks for radiation-induced point defects. The sink capability is dependent on the atomic structures and varies with the type of point defects. Using high-resolution transmission electron microscopy, we observed that {Sigma}3{l_brace}112{r_brace} incoherent twin boundary (ITB) in Cu films migrates under Cu{sup 3+} ion irradiation. Using atomistic modeling, we found that {Sigma}3{l_brace}112{r_brace} ITB has the preferred sites for adsorbing interstitials and the preferential diffusion channels along the Shockley partial dislocations. Coupling with the high mobility of grain boundary Shockley dislocations within {Sigma}3{l_brace}112{r_brace} ITB, we infer that {Sigma}3{l_brace}112{r_brace} ITB migrates through the collective glide of grain boundary Shockley dislocations, driven by a concurrent reduction in the density of radiation-induced defects, which is demonstrated by the distribution of nearby radiation-induced defects.},
doi = {10.1063/1.4774242},
url = {https://www.osti.gov/biblio/22102205}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 113,
place = {United States},
year = {2013},
month = {1}
}