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Title: Incoherent twin boundary migration induced by ion irradiation in Cu

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4774242· OSTI ID:22102205
;  [1]; ;  [2];  [3];  [4]
  1. Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  2. Materials Science and Technology Division, MST-8, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  3. CEA, DEN, Service de Recherches de Metallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)
  4. Nebraska Center for Energy Sciences Research, University of Nebraska, Lincoln, Nebraska 68588 (United States)

Grain boundaries can act as sinks for radiation-induced point defects. The sink capability is dependent on the atomic structures and varies with the type of point defects. Using high-resolution transmission electron microscopy, we observed that {Sigma}3{l_brace}112{r_brace} incoherent twin boundary (ITB) in Cu films migrates under Cu{sup 3+} ion irradiation. Using atomistic modeling, we found that {Sigma}3{l_brace}112{r_brace} ITB has the preferred sites for adsorbing interstitials and the preferential diffusion channels along the Shockley partial dislocations. Coupling with the high mobility of grain boundary Shockley dislocations within {Sigma}3{l_brace}112{r_brace} ITB, we infer that {Sigma}3{l_brace}112{r_brace} ITB migrates through the collective glide of grain boundary Shockley dislocations, driven by a concurrent reduction in the density of radiation-induced defects, which is demonstrated by the distribution of nearby radiation-induced defects.

OSTI ID:
22102205
Journal Information:
Journal of Applied Physics, Vol. 113, Issue 2; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English