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Title: Effect of O{sub 2} gas partial pressure on mechanical properties of Al{sub 2}O{sub 3} films deposited by inductively coupled plasma-assisted radio frequency magnetron sputtering

Abstract

The effect of O{sub 2} partial pressure on the mechanical properties of Al{sub 2}O{sub 3} films is studied. Using films prepared by inductively coupled plasma-assisted radio frequency magnetron sputtering, the deposition rate of Al{sub 2}O{sub 3} decreases rapidly when oxygen is added to the argon sputtering gas. The internal stresses in the films are compressive, with magnitude decreasing steeply from 1.6 GPa for films sputtered in pure argon gas to 0.5 GPa for films sputtered in argon gas at an O{sub 2} partial pressure of 0.89 Multiplication-Sign 10{sup -2} Pa. Stress increases gradually with increasing O{sub 2} partial pressure. Using a nanoindentation tester with a Berkovich indenter, film hardness was measured to be about 14 GPa for films sputtered in pure argon gas. Hardness decreases rapidly on the addition of O{sub 2} gas, but increases when the O{sub 2} partial pressure is increased. Adhesion, measured using a Vickers microhardness tester, increases with increasing O{sub 2} partial pressure. Electron probe microanalyzer measurements reveal that the argon content of films decreases with increasing O{sub 2} partial pressure, whereas the O to Al composition ratio increases from 1.15 for films sputtered in pure argon gas to 1.5 for films sputtered in argon gasmore » at O{sub 2} partial pressures over 2.4 Multiplication-Sign 10{sup -2} Pa. X-ray diffraction measurements reveal that films sputtered in pure argon gas have an amorphous crystal structure, whereas {gamma}-Al{sub 2}O{sub 3} is produced for films sputtered in argon gas with added O{sub 2} gas. Atomic force microscopy observations reveal that the surface topography of sputtered Al{sub 2}O{sub 3} films changes from spherical to needlelike as O{sub 2} partial pressure is increased. Fracture cross sections of the films observed by scanning electron microscopy reveal that the film morphology exhibits no discernible features at all O{sub 2} partial pressures.« less

Authors:
; ;  [1]
  1. Faculty of Engineering, Fukuoka Institute of Technology, 3-30-1 Wajirohigashi, Higashi-ku, Fukuoka 811-0295 (Japan)
Publication Date:
OSTI Identifier:
22102195
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 30; Journal Issue: 5; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ARGON; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DEPOSITION; ELECTRON PROBES; FRACTURES; MAGNETRONS; MICROHARDNESS; MORPHOLOGY; OXYGEN; PARTIAL PRESSURE; PLASMA; RADIOWAVE RADIATION; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SPUTTERING; THIN FILMS; VICKERS HARDNESS; X-RAY DIFFRACTION

Citation Formats

Fujiyama, Hirokazu, Sumomogi, Tsunetaka, Nakamura, Masayoshi, and Faculty of Engineering, Hiroshima Kokusai Gakuin University, 6-20-1 Nakano, Aki-ku, Hiroshima 739-0321. Effect of O{sub 2} gas partial pressure on mechanical properties of Al{sub 2}O{sub 3} films deposited by inductively coupled plasma-assisted radio frequency magnetron sputtering. United States: N. p., 2012. Web. doi:10.1116/1.4746013.
Fujiyama, Hirokazu, Sumomogi, Tsunetaka, Nakamura, Masayoshi, & Faculty of Engineering, Hiroshima Kokusai Gakuin University, 6-20-1 Nakano, Aki-ku, Hiroshima 739-0321. Effect of O{sub 2} gas partial pressure on mechanical properties of Al{sub 2}O{sub 3} films deposited by inductively coupled plasma-assisted radio frequency magnetron sputtering. United States. https://doi.org/10.1116/1.4746013
Fujiyama, Hirokazu, Sumomogi, Tsunetaka, Nakamura, Masayoshi, and Faculty of Engineering, Hiroshima Kokusai Gakuin University, 6-20-1 Nakano, Aki-ku, Hiroshima 739-0321. Sat . "Effect of O{sub 2} gas partial pressure on mechanical properties of Al{sub 2}O{sub 3} films deposited by inductively coupled plasma-assisted radio frequency magnetron sputtering". United States. https://doi.org/10.1116/1.4746013.
@article{osti_22102195,
title = {Effect of O{sub 2} gas partial pressure on mechanical properties of Al{sub 2}O{sub 3} films deposited by inductively coupled plasma-assisted radio frequency magnetron sputtering},
author = {Fujiyama, Hirokazu and Sumomogi, Tsunetaka and Nakamura, Masayoshi and Faculty of Engineering, Hiroshima Kokusai Gakuin University, 6-20-1 Nakano, Aki-ku, Hiroshima 739-0321},
abstractNote = {The effect of O{sub 2} partial pressure on the mechanical properties of Al{sub 2}O{sub 3} films is studied. Using films prepared by inductively coupled plasma-assisted radio frequency magnetron sputtering, the deposition rate of Al{sub 2}O{sub 3} decreases rapidly when oxygen is added to the argon sputtering gas. The internal stresses in the films are compressive, with magnitude decreasing steeply from 1.6 GPa for films sputtered in pure argon gas to 0.5 GPa for films sputtered in argon gas at an O{sub 2} partial pressure of 0.89 Multiplication-Sign 10{sup -2} Pa. Stress increases gradually with increasing O{sub 2} partial pressure. Using a nanoindentation tester with a Berkovich indenter, film hardness was measured to be about 14 GPa for films sputtered in pure argon gas. Hardness decreases rapidly on the addition of O{sub 2} gas, but increases when the O{sub 2} partial pressure is increased. Adhesion, measured using a Vickers microhardness tester, increases with increasing O{sub 2} partial pressure. Electron probe microanalyzer measurements reveal that the argon content of films decreases with increasing O{sub 2} partial pressure, whereas the O to Al composition ratio increases from 1.15 for films sputtered in pure argon gas to 1.5 for films sputtered in argon gas at O{sub 2} partial pressures over 2.4 Multiplication-Sign 10{sup -2} Pa. X-ray diffraction measurements reveal that films sputtered in pure argon gas have an amorphous crystal structure, whereas {gamma}-Al{sub 2}O{sub 3} is produced for films sputtered in argon gas with added O{sub 2} gas. Atomic force microscopy observations reveal that the surface topography of sputtered Al{sub 2}O{sub 3} films changes from spherical to needlelike as O{sub 2} partial pressure is increased. Fracture cross sections of the films observed by scanning electron microscopy reveal that the film morphology exhibits no discernible features at all O{sub 2} partial pressures.},
doi = {10.1116/1.4746013},
url = {https://www.osti.gov/biblio/22102195}, journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 5,
volume = 30,
place = {United States},
year = {2012},
month = {9}
}