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Title: Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

Abstract

Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been reached, which allowed for ion energies up to 272 eV. Besides the bias voltage, the ion energy and the ion flux, also the electron temperature, the electron density, and the optical emission of the plasma have been measured. The effects of substrate biasing during plasma-assisted ALD have been investigated for Al{sub 2}O{sub 3}, Co{sub 3}O{sub 4}, and TiO{sub 2} thin films. The growth per cycle, the mass density, and the crystallinity have been investigated, and it was found that these process and material properties can be tailored using substrate biasing. Additionally, the residual stress in substrates coated with Al{sub 2}O{sub 3} films varied with the substrate bias voltage. The results reported in this article demonstrate that substrate biasing is a promising technique to tailor the material properties of thin films synthesized by plasma-assisted ALD.

Authors:
; ;  [1]
  1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)
Publication Date:
OSTI Identifier:
22099146
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 31; Journal Issue: 1; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ALUMINIUM OXIDES; COBALT OXIDES; CRYSTAL GROWTH; DENSITY; DEPOSITION; ELECTRIC POTENTIAL; ELECTRON DENSITY; ELECTRON TEMPERATURE; EMISSION; EV RANGE; IONS; PLASMA; RESIDUAL STRESSES; SUBSTRATES; THIN FILMS; TITANIUM OXIDES

Citation Formats

Profijt, H. B., Sanden, M. C. M. van de, and Kessels, W. M. M. Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth. United States: N. p., 2013. Web. doi:10.1116/1.4756906.
Profijt, H. B., Sanden, M. C. M. van de, & Kessels, W. M. M. Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth. United States. doi:10.1116/1.4756906.
Profijt, H. B., Sanden, M. C. M. van de, and Kessels, W. M. M. Tue . "Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth". United States. doi:10.1116/1.4756906.
@article{osti_22099146,
title = {Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth},
author = {Profijt, H. B. and Sanden, M. C. M. van de and Kessels, W. M. M.},
abstractNote = {Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been reached, which allowed for ion energies up to 272 eV. Besides the bias voltage, the ion energy and the ion flux, also the electron temperature, the electron density, and the optical emission of the plasma have been measured. The effects of substrate biasing during plasma-assisted ALD have been investigated for Al{sub 2}O{sub 3}, Co{sub 3}O{sub 4}, and TiO{sub 2} thin films. The growth per cycle, the mass density, and the crystallinity have been investigated, and it was found that these process and material properties can be tailored using substrate biasing. Additionally, the residual stress in substrates coated with Al{sub 2}O{sub 3} films varied with the substrate bias voltage. The results reported in this article demonstrate that substrate biasing is a promising technique to tailor the material properties of thin films synthesized by plasma-assisted ALD.},
doi = {10.1116/1.4756906},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 1,
volume = 31,
place = {United States},
year = {Tue Jan 15 00:00:00 EST 2013},
month = {Tue Jan 15 00:00:00 EST 2013}
}