Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition

Journal Article · Thu Nov 15 00:00:00 EST 2012 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4762800· OSTI ID:22099114

Runlai, Wan; Ming, Yang; Qianfei, Zhou; Qun, Zhang ^[1]

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1. Department of Materials Science, Fudan University, Shanghai 200433 (China)

Transparent conductive indium zinc oxide films were prepared by pulsed plasma deposition from a ceramic target (90 wt. % In{sub 2}O{sub 3} and 10 wt. % ZnO). The dependences of film properties upon the substrate temperature was investigated using characterization methods including x-ray diffraction, atomic force microscope, Hall measurement, ultraviolet-visible spectroscopy, and x-ray photoelectron spectroscopy. The films grown at room temperature had a rather smooth surface due to the amorphous structure, with a root mean square roughness of less than 1 nm. The atomic ratio of Zn/(Zn + In) in these films is 15.3 at. %, which is close to that in the target, and the chemical states of indium and zinc atoms were In{sup 3+} and Zn{sup 2+}, respectively. The films deposited on a substrate with a temperature of 200 Degree-Sign C exhibited polycrystalline structure and a preferred growth orientation along the (222) plane. Here the electrical properties were improved due to the better crystallinity, with the films exhibiting a minimum resistivity value of 4.2 Multiplication-Sign 10{sup -4}{Omega} cm, a maximum carrier mobility of 45 cm{sup 2} V{sup -1} s{sup -1}, and an optical transmittance over 80% in the visible region.

• OSTI ID: 22099114
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 30, Issue 6; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CARRIER MOBILITY
CHEMICAL STATE
ELECTRICAL PROPERTIES
GRAIN ORIENTATION
HALL EFFECT
INDIUM IONS
INDIUM OXIDES
PLASMA
PULSED IRRADIATION
SURFACE COATING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC IONS
ZINC OXIDES