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Title: Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition

Abstract

Transparent conductive indium zinc oxide films were prepared by pulsed plasma deposition from a ceramic target (90 wt. % In{sub 2}O{sub 3} and 10 wt. % ZnO). The dependences of film properties upon the substrate temperature was investigated using characterization methods including x-ray diffraction, atomic force microscope, Hall measurement, ultraviolet-visible spectroscopy, and x-ray photoelectron spectroscopy. The films grown at room temperature had a rather smooth surface due to the amorphous structure, with a root mean square roughness of less than 1 nm. The atomic ratio of Zn/(Zn + In) in these films is 15.3 at. %, which is close to that in the target, and the chemical states of indium and zinc atoms were In{sup 3+} and Zn{sup 2+}, respectively. The films deposited on a substrate with a temperature of 200 Degree-Sign C exhibited polycrystalline structure and a preferred growth orientation along the (222) plane. Here the electrical properties were improved due to the better crystallinity, with the films exhibiting a minimum resistivity value of 4.2 Multiplication-Sign 10{sup -4}{Omega} cm, a maximum carrier mobility of 45 cm{sup 2} V{sup -1} s{sup -1}, and an optical transmittance over 80% in the visible region.

Authors:
; ; ;  [1]
  1. Department of Materials Science, Fudan University, Shanghai 200433 (China)
Publication Date:
OSTI Identifier:
22099114
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 30; Journal Issue: 6; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CHEMICAL STATE; ELECTRICAL PROPERTIES; GRAIN ORIENTATION; HALL EFFECT; INDIUM IONS; INDIUM OXIDES; PLASMA; PULSED IRRADIATION; SURFACE COATING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC IONS; ZINC OXIDES

Citation Formats

Wan Runlai, Yang Ming, Zhou Qianfei, and Zhang Qun. Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition. United States: N. p., 2012. Web. doi:10.1116/1.4762800.
Wan Runlai, Yang Ming, Zhou Qianfei, & Zhang Qun. Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition. United States. doi:10.1116/1.4762800.
Wan Runlai, Yang Ming, Zhou Qianfei, and Zhang Qun. Thu . "Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition". United States. doi:10.1116/1.4762800.
@article{osti_22099114,
title = {Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition},
author = {Wan Runlai and Yang Ming and Zhou Qianfei and Zhang Qun},
abstractNote = {Transparent conductive indium zinc oxide films were prepared by pulsed plasma deposition from a ceramic target (90 wt. % In{sub 2}O{sub 3} and 10 wt. % ZnO). The dependences of film properties upon the substrate temperature was investigated using characterization methods including x-ray diffraction, atomic force microscope, Hall measurement, ultraviolet-visible spectroscopy, and x-ray photoelectron spectroscopy. The films grown at room temperature had a rather smooth surface due to the amorphous structure, with a root mean square roughness of less than 1 nm. The atomic ratio of Zn/(Zn + In) in these films is 15.3 at. %, which is close to that in the target, and the chemical states of indium and zinc atoms were In{sup 3+} and Zn{sup 2+}, respectively. The films deposited on a substrate with a temperature of 200 Degree-Sign C exhibited polycrystalline structure and a preferred growth orientation along the (222) plane. Here the electrical properties were improved due to the better crystallinity, with the films exhibiting a minimum resistivity value of 4.2 Multiplication-Sign 10{sup -4}{Omega} cm, a maximum carrier mobility of 45 cm{sup 2} V{sup -1} s{sup -1}, and an optical transmittance over 80% in the visible region.},
doi = {10.1116/1.4762800},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 6,
volume = 30,
place = {United States},
year = {2012},
month = {11}
}