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Title: Microstructure and electrical properties of LaNiO{sub 3} thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O{sub 3} films on silicon and nickel substrates

Abstract

Conductive LaNiO{sub 3} (LNO) thin films were deposited on Si substrates by RF sputtering at room temperature to 600 Degree-Sign C. X-ray diffraction of the LNO films showed that preferred orientation varied from (100) below 500 Degree-Sign C to (110) at 600 Degree-Sign C at deposition temperature of 200-600 Degree-Sign C. The room temperature resistivity was 2250-3400 {mu}{Omega}-cm at the range of 200 Degree-Sign C {approx}500 Degree-Sign C. The LNO films, deposited at room temperature, were postannealed in air from 500 to 800 Degree-Sign C, and the resistivity value was 280 {mu}{Omega}-cm at a postannealing temperature of 600 Degree-Sign C. Subsequently, sol-gel derived (Pb,La)(Zr,Ti)O{sub 3} thin films were deposited on LNO-buffered nickel substrates and characterized, the results were compared to those of the same films on silicon substrates. The comparison demonstrated that the performance characteristics of the LNO-buffered nickel foils are similar to those of LNO-buffered silicon substrates. Thus, LNO films prepared by the sputtering method can act as an effective barrier layer on nickel substrates for embedded microelectronic devices.

Authors:
; ; ; ; ;  [1];  [2];  [2]
  1. Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22099113
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 30; Journal Issue: 6; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AIR; DEPOSITION; ELECTRICAL PROPERTIES; FOILS; GRAIN ORIENTATION; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; NICKEL; NICKEL OXIDES; SILICON; SOL-GEL PROCESS; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANIUM OXIDES; X-RAY DIFFRACTION

Citation Formats

Liu Shanshan, Ma Beihai, Narayanan, Manoj, Tong Sheng, Koritala, Rachel, Balachandran, Uthamalingam, Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, and Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439. Microstructure and electrical properties of LaNiO{sub 3} thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O{sub 3} films on silicon and nickel substrates. United States: N. p., 2012. Web. doi:10.1116/1.4752084.
Liu Shanshan, Ma Beihai, Narayanan, Manoj, Tong Sheng, Koritala, Rachel, Balachandran, Uthamalingam, Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, & Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439. Microstructure and electrical properties of LaNiO{sub 3} thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O{sub 3} films on silicon and nickel substrates. United States. doi:10.1116/1.4752084.
Liu Shanshan, Ma Beihai, Narayanan, Manoj, Tong Sheng, Koritala, Rachel, Balachandran, Uthamalingam, Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, and Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439. Thu . "Microstructure and electrical properties of LaNiO{sub 3} thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O{sub 3} films on silicon and nickel substrates". United States. doi:10.1116/1.4752084.
@article{osti_22099113,
title = {Microstructure and electrical properties of LaNiO{sub 3} thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O{sub 3} films on silicon and nickel substrates},
author = {Liu Shanshan and Ma Beihai and Narayanan, Manoj and Tong Sheng and Koritala, Rachel and Balachandran, Uthamalingam and Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 and Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439},
abstractNote = {Conductive LaNiO{sub 3} (LNO) thin films were deposited on Si substrates by RF sputtering at room temperature to 600 Degree-Sign C. X-ray diffraction of the LNO films showed that preferred orientation varied from (100) below 500 Degree-Sign C to (110) at 600 Degree-Sign C at deposition temperature of 200-600 Degree-Sign C. The room temperature resistivity was 2250-3400 {mu}{Omega}-cm at the range of 200 Degree-Sign C {approx}500 Degree-Sign C. The LNO films, deposited at room temperature, were postannealed in air from 500 to 800 Degree-Sign C, and the resistivity value was 280 {mu}{Omega}-cm at a postannealing temperature of 600 Degree-Sign C. Subsequently, sol-gel derived (Pb,La)(Zr,Ti)O{sub 3} thin films were deposited on LNO-buffered nickel substrates and characterized, the results were compared to those of the same films on silicon substrates. The comparison demonstrated that the performance characteristics of the LNO-buffered nickel foils are similar to those of LNO-buffered silicon substrates. Thus, LNO films prepared by the sputtering method can act as an effective barrier layer on nickel substrates for embedded microelectronic devices.},
doi = {10.1116/1.4752084},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 6,
volume = 30,
place = {United States},
year = {2012},
month = {11}
}