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Title: New oxygen radical source using selective sputtering of oxygen atoms for high rate deposition of TiO{sub 2} films

Abstract

We have developed a new oxygen radical source based on the reactive sputtering phenomena of a titanium target for high rate deposition of TiO{sub 2} films. In this oxygen radical source, oxygen radicals are mainly produced by two mechanisms: selective sputter-emission of oxygen atoms from the target surface covered with a titanium oxide layer, and production of high-density oxygen plasma in the space near the magnetron-sputtering cathode. Compared with molecular oxygen ions, the amount of atomic oxygen radicals increased significantly with an increase in discharge current so that atomic oxygen radicals were mainly produced by this radical source. It should be noted that oxygen atoms were selectively sputtered from the target surface, and titanium atoms sputter-emitted from the target cathode were negligibly small. The amount of oxygen radicals supplied from this radical source increased linearly with increasing discharge current, and oxygen radicals of 1 Multiplication-Sign 10{sup 15} atoms/s/cm{sup 2} were supplied to the substrate surface at a discharge current of 1.2 A. We conclude that our newly developed oxygen radical source can be a good tool to achieve high rate deposition and to control the structure of TiO{sub 2} films for many industrial design applications.

Authors:
; ;  [1];  [2];  [3]
  1. Department of Electronics and Information Technology, Tokyo Polytechnic University, Kanagawa 243-0297 (Japan)
  2. (China)
  3. (Japan)
Publication Date:
OSTI Identifier:
22099111
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 30; Journal Issue: 6; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CATHODES; CURRENTS; DEPOSITION; MAGNETRONS; OXYGEN; OXYGEN IONS; PLASMA DENSITY; RADICALS; SPUTTERING; THIN FILMS; TITANIUM; TITANIUM OXIDES

Citation Formats

Yasuda, Yoji, Lei, Hao, Hoshi, Yoichi, State Key Laboratory for Corrosion and Protection, Surface Engineering of Materials Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, and Department of Electronics and Information Technology, Tokyo Polytechnic University, Kanagawa 243-0297. New oxygen radical source using selective sputtering of oxygen atoms for high rate deposition of TiO{sub 2} films. United States: N. p., 2012. Web. doi:10.1116/1.4748803.
Yasuda, Yoji, Lei, Hao, Hoshi, Yoichi, State Key Laboratory for Corrosion and Protection, Surface Engineering of Materials Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, & Department of Electronics and Information Technology, Tokyo Polytechnic University, Kanagawa 243-0297. New oxygen radical source using selective sputtering of oxygen atoms for high rate deposition of TiO{sub 2} films. United States. doi:10.1116/1.4748803.
Yasuda, Yoji, Lei, Hao, Hoshi, Yoichi, State Key Laboratory for Corrosion and Protection, Surface Engineering of Materials Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, and Department of Electronics and Information Technology, Tokyo Polytechnic University, Kanagawa 243-0297. Thu . "New oxygen radical source using selective sputtering of oxygen atoms for high rate deposition of TiO{sub 2} films". United States. doi:10.1116/1.4748803.
@article{osti_22099111,
title = {New oxygen radical source using selective sputtering of oxygen atoms for high rate deposition of TiO{sub 2} films},
author = {Yasuda, Yoji and Lei, Hao and Hoshi, Yoichi and State Key Laboratory for Corrosion and Protection, Surface Engineering of Materials Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 and Department of Electronics and Information Technology, Tokyo Polytechnic University, Kanagawa 243-0297},
abstractNote = {We have developed a new oxygen radical source based on the reactive sputtering phenomena of a titanium target for high rate deposition of TiO{sub 2} films. In this oxygen radical source, oxygen radicals are mainly produced by two mechanisms: selective sputter-emission of oxygen atoms from the target surface covered with a titanium oxide layer, and production of high-density oxygen plasma in the space near the magnetron-sputtering cathode. Compared with molecular oxygen ions, the amount of atomic oxygen radicals increased significantly with an increase in discharge current so that atomic oxygen radicals were mainly produced by this radical source. It should be noted that oxygen atoms were selectively sputtered from the target surface, and titanium atoms sputter-emitted from the target cathode were negligibly small. The amount of oxygen radicals supplied from this radical source increased linearly with increasing discharge current, and oxygen radicals of 1 Multiplication-Sign 10{sup 15} atoms/s/cm{sup 2} were supplied to the substrate surface at a discharge current of 1.2 A. We conclude that our newly developed oxygen radical source can be a good tool to achieve high rate deposition and to control the structure of TiO{sub 2} films for many industrial design applications.},
doi = {10.1116/1.4748803},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 6,
volume = 30,
place = {United States},
year = {2012},
month = {11}
}