New oxygen radical source using selective sputtering of oxygen atoms for high rate deposition of TiO{sub 2} films
- Department of Electronics and Information Technology, Tokyo Polytechnic University, Kanagawa 243-0297 (Japan)
We have developed a new oxygen radical source based on the reactive sputtering phenomena of a titanium target for high rate deposition of TiO{sub 2} films. In this oxygen radical source, oxygen radicals are mainly produced by two mechanisms: selective sputter-emission of oxygen atoms from the target surface covered with a titanium oxide layer, and production of high-density oxygen plasma in the space near the magnetron-sputtering cathode. Compared with molecular oxygen ions, the amount of atomic oxygen radicals increased significantly with an increase in discharge current so that atomic oxygen radicals were mainly produced by this radical source. It should be noted that oxygen atoms were selectively sputtered from the target surface, and titanium atoms sputter-emitted from the target cathode were negligibly small. The amount of oxygen radicals supplied from this radical source increased linearly with increasing discharge current, and oxygen radicals of 1 Multiplication-Sign 10{sup 15} atoms/s/cm{sup 2} were supplied to the substrate surface at a discharge current of 1.2 A. We conclude that our newly developed oxygen radical source can be a good tool to achieve high rate deposition and to control the structure of TiO{sub 2} films for many industrial design applications.
- OSTI ID:
- 22099111
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 30, Issue 6; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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