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Title: Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy

Abstract

The authors present a study on the thermal evolution of the reflection high-energy electron diffraction pattern of chemically cleaned (001)-oriented Si, Ge, and SiGe surfaces, associating observed changes in the reconstructions with the desorption of known residual contaminants for Si and Ge surfaces. The implications of residual oxides prior to epitaxy on stacking fault densities in the grown films are presented. Further evidence for the two-phase nature of oxides on SiGe surfaces is provided, demonstrating that it is necessary to heat a SiGe surface up to the thermal deoxidation temperature of a Si surface to obtain stacking fault-free growth.

Authors:
;  [1]
  1. Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 (United States)
Publication Date:
OSTI Identifier:
22099109
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 30; Journal Issue: 6; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; DESORPTION; ELECTRON DIFFRACTION; GERMANIUM; GERMANIUM SILICIDES; MOLECULAR BEAM EPITAXY; OXIDES; REDUCTION; REFLECTION; SILICON; STACKING FAULTS; THIN FILMS

Citation Formats

Ali, Dyan, and Richardson, Christopher J. K. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy. United States: N. p., 2012. Web. doi:10.1116/1.4757594.
Ali, Dyan, & Richardson, Christopher J. K. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy. United States. doi:10.1116/1.4757594.
Ali, Dyan, and Richardson, Christopher J. K. Thu . "Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy". United States. doi:10.1116/1.4757594.
@article{osti_22099109,
title = {Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy},
author = {Ali, Dyan and Richardson, Christopher J. K.},
abstractNote = {The authors present a study on the thermal evolution of the reflection high-energy electron diffraction pattern of chemically cleaned (001)-oriented Si, Ge, and SiGe surfaces, associating observed changes in the reconstructions with the desorption of known residual contaminants for Si and Ge surfaces. The implications of residual oxides prior to epitaxy on stacking fault densities in the grown films are presented. Further evidence for the two-phase nature of oxides on SiGe surfaces is provided, demonstrating that it is necessary to heat a SiGe surface up to the thermal deoxidation temperature of a Si surface to obtain stacking fault-free growth.},
doi = {10.1116/1.4757594},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 6,
volume = 30,
place = {United States},
year = {2012},
month = {11}
}