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Title: Study on the oxidation and reduction of tungsten surface for sub-50 nm patterning process

Abstract

The oxidation characteristics of tungsten line pattern during the carbon-based mask-layer removal process using oxygen plasmas have been investigated for sub-50 nm patterning processes, in addition to the reduction characteristics of the WO{sub x} layer formed on the tungsten line surface using hydrogen plasmas. The surface oxidation of tungsten lines during the mask layer removal process could be minimized by using low-temperature (300 K) plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WO{sub x} on the tungsten line could be decreased to 25% compared to results from high-temperature processing. The WO{sub x} layer could also be completely removed at a low temperature of 300 K using a hydrogen plasma by supplying bias power to the tungsten substrate to provide a activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40-nm-CD device processing, the complete removal of WO{sub x} formed on the sidewall of tungsten line could be observed.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [3];  [2]
  1. Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711, South Korea and Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
  2. (Korea, Republic of)
  3. (United States)
Publication Date:
OSTI Identifier:
22099107
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 30; Journal Issue: 6; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ACTIVATION ENERGY; CARBON; HYDROGEN; OXIDATION; OXYGEN; PLASMA; REDUCTION; SURFACE TREATMENTS; SURFACES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0400-1000 K; THICKNESS; TUNGSTEN; TUNGSTEN OXIDES

Citation Formats

Kim, Jong Kyu, Nam, Seok Woo, Cho, Sung Il, Jhon, Myung S., Min, Kyung Suk, Kim, Chan Kyu, Jung, Ho Bum, Yeom, Geun Young, Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711, Department of Chemical Engineering and Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, and Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746. Study on the oxidation and reduction of tungsten surface for sub-50 nm patterning process. United States: N. p., 2012. Web. doi:10.1116/1.4758790.
Kim, Jong Kyu, Nam, Seok Woo, Cho, Sung Il, Jhon, Myung S., Min, Kyung Suk, Kim, Chan Kyu, Jung, Ho Bum, Yeom, Geun Young, Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711, Department of Chemical Engineering and Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, & Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746. Study on the oxidation and reduction of tungsten surface for sub-50 nm patterning process. United States. doi:10.1116/1.4758790.
Kim, Jong Kyu, Nam, Seok Woo, Cho, Sung Il, Jhon, Myung S., Min, Kyung Suk, Kim, Chan Kyu, Jung, Ho Bum, Yeom, Geun Young, Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711, Department of Chemical Engineering and Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, and Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746. Thu . "Study on the oxidation and reduction of tungsten surface for sub-50 nm patterning process". United States. doi:10.1116/1.4758790.
@article{osti_22099107,
title = {Study on the oxidation and reduction of tungsten surface for sub-50 nm patterning process},
author = {Kim, Jong Kyu and Nam, Seok Woo and Cho, Sung Il and Jhon, Myung S. and Min, Kyung Suk and Kim, Chan Kyu and Jung, Ho Bum and Yeom, Geun Young and Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711 and Department of Chemical Engineering and Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 and Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746},
abstractNote = {The oxidation characteristics of tungsten line pattern during the carbon-based mask-layer removal process using oxygen plasmas have been investigated for sub-50 nm patterning processes, in addition to the reduction characteristics of the WO{sub x} layer formed on the tungsten line surface using hydrogen plasmas. The surface oxidation of tungsten lines during the mask layer removal process could be minimized by using low-temperature (300 K) plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WO{sub x} on the tungsten line could be decreased to 25% compared to results from high-temperature processing. The WO{sub x} layer could also be completely removed at a low temperature of 300 K using a hydrogen plasma by supplying bias power to the tungsten substrate to provide a activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40-nm-CD device processing, the complete removal of WO{sub x} formed on the sidewall of tungsten line could be observed.},
doi = {10.1116/1.4758790},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 6,
volume = 30,
place = {United States},
year = {2012},
month = {11}
}