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Title: Comparison endpoint study of process plasma and secondary electron beam exciter optical emission spectroscopy

Abstract

Traditionally process plasmas are often studied and monitored by optical emission spectroscopy. Here, the authors compare experimental measurements from a secondary electron beam excitation and direct process plasma excitation to discuss and illustrate its distinctiveness in the study of process plasmas. They present results that show excitations of etch process effluents in a SF{sub 6} discharge and endpoint detection capabilities in dark plasma process conditions. In SF{sub 6} discharges, a band around 300 nm, not visible in process emission, is observed and it can serve as a good indicator of etch product emission during polysilicon etches. Based on prior work reported in literature the authors believe this band is due to SiF{sub 4} gas phase species.

Authors:
; ; ; ;  [1];  [2];  [2];  [2]
  1. Department of Mechanical Engineering, University of Texas at Dallas, 800W Campbell Road, Richardson, Texas 75080 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22099106
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 30; Journal Issue: 6; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; COMPARATIVE EVALUATIONS; DETECTION; ELECTRIC DISCHARGES; ELECTRON BEAMS; EMISSION SPECTROSCOPY; ETCHING; EXCITATION; PLASMA; PLASMA DIAGNOSTICS; SILICON FLUORIDES; SULFUR FLUORIDES

Citation Formats

Stephan Thamban, P. L., Yun, Stuart, Padron-Wells, Gabriel, Hosch, Jimmy W., Goeckner, Matthew J., Department of Electrical Engineering, University of Texas at Dallas, 800W Campbell Road, Richardson, Texas 75080, Verity Instruments, Inc., 2901 Eisenhower Street, Carrollton, Texas 75007, and Department of Mathematical Sciences, University of Texas at Dallas, 800 W Campbell Road, Richardson, Texas 75080. Comparison endpoint study of process plasma and secondary electron beam exciter optical emission spectroscopy. United States: N. p., 2012. Web. doi:10.1116/1.4756694.
Stephan Thamban, P. L., Yun, Stuart, Padron-Wells, Gabriel, Hosch, Jimmy W., Goeckner, Matthew J., Department of Electrical Engineering, University of Texas at Dallas, 800W Campbell Road, Richardson, Texas 75080, Verity Instruments, Inc., 2901 Eisenhower Street, Carrollton, Texas 75007, & Department of Mathematical Sciences, University of Texas at Dallas, 800 W Campbell Road, Richardson, Texas 75080. Comparison endpoint study of process plasma and secondary electron beam exciter optical emission spectroscopy. United States. doi:10.1116/1.4756694.
Stephan Thamban, P. L., Yun, Stuart, Padron-Wells, Gabriel, Hosch, Jimmy W., Goeckner, Matthew J., Department of Electrical Engineering, University of Texas at Dallas, 800W Campbell Road, Richardson, Texas 75080, Verity Instruments, Inc., 2901 Eisenhower Street, Carrollton, Texas 75007, and Department of Mathematical Sciences, University of Texas at Dallas, 800 W Campbell Road, Richardson, Texas 75080. Thu . "Comparison endpoint study of process plasma and secondary electron beam exciter optical emission spectroscopy". United States. doi:10.1116/1.4756694.
@article{osti_22099106,
title = {Comparison endpoint study of process plasma and secondary electron beam exciter optical emission spectroscopy},
author = {Stephan Thamban, P. L. and Yun, Stuart and Padron-Wells, Gabriel and Hosch, Jimmy W. and Goeckner, Matthew J. and Department of Electrical Engineering, University of Texas at Dallas, 800W Campbell Road, Richardson, Texas 75080 and Verity Instruments, Inc., 2901 Eisenhower Street, Carrollton, Texas 75007 and Department of Mathematical Sciences, University of Texas at Dallas, 800 W Campbell Road, Richardson, Texas 75080},
abstractNote = {Traditionally process plasmas are often studied and monitored by optical emission spectroscopy. Here, the authors compare experimental measurements from a secondary electron beam excitation and direct process plasma excitation to discuss and illustrate its distinctiveness in the study of process plasmas. They present results that show excitations of etch process effluents in a SF{sub 6} discharge and endpoint detection capabilities in dark plasma process conditions. In SF{sub 6} discharges, a band around 300 nm, not visible in process emission, is observed and it can serve as a good indicator of etch product emission during polysilicon etches. Based on prior work reported in literature the authors believe this band is due to SiF{sub 4} gas phase species.},
doi = {10.1116/1.4756694},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 6,
volume = 30,
place = {United States},
year = {2012},
month = {11}
}