skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: K-shell spectroscopy of silicon ions as diagnostic for high electric fields

Abstract

We developed a detection scheme, capable of measuring X-ray line shape of tracer ions in {mu}m thick layers at the rear side of a target foil irradiated by ultra intense laser pulses. We performed simulations of the effect of strong electric fields on the K-shell emission of silicon and developed a spectrometer dedicated to record this emission. The combination of a cylindrically bent crystal in von Hamos geometry and a CCD camera with its single photon counting capability allows for a high dynamic range of the instrument and background free spectra. This approach will be used in future experiments to study electric fields of the order of TV/m at high density plasmas close to solid density.

Authors:
; ; ; ; ;  [1];  [2];  [3];  [1]; ; ;  [4]
  1. Helmholtz-Institut Jena, Helmholtzweg 4, D-07743 Jena (Germany)
  2. (Germany)
  3. Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany)
  4. Faculty of Physics, Weizmann Institute of Science, P.O. Box 26, Rehovot 76100 (Israel)
Publication Date:
OSTI Identifier:
22093984
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 83; Journal Issue: 11; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0034-6748
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE-COUPLED DEVICES; CRYSTALS; DETECTION; ELECTRIC FIELDS; EMISSION; K SHELL; LASER RADIATION; LAYERS; LIGHT TRANSMISSION; PLASMA DENSITY; SEMICONDUCTOR MATERIALS; SILICON IONS; SIMULATION; SPECTRA; SPECTROMETERS; SPECTROSCOPY; X RADIATION; X-RAY SOURCES

Citation Formats

Loetzsch, R., Jaeckel, O., Hoefer, S., Kaempfer, T., Uschmann, I., Kaluza, M. C., Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena, Polz, J., Foerster, E., Stambulchik, E., Kroupp, E., and Maron, Y. K-shell spectroscopy of silicon ions as diagnostic for high electric fields. United States: N. p., 2012. Web. doi:10.1063/1.4767452.
Loetzsch, R., Jaeckel, O., Hoefer, S., Kaempfer, T., Uschmann, I., Kaluza, M. C., Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena, Polz, J., Foerster, E., Stambulchik, E., Kroupp, E., & Maron, Y. K-shell spectroscopy of silicon ions as diagnostic for high electric fields. United States. doi:10.1063/1.4767452.
Loetzsch, R., Jaeckel, O., Hoefer, S., Kaempfer, T., Uschmann, I., Kaluza, M. C., Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena, Polz, J., Foerster, E., Stambulchik, E., Kroupp, E., and Maron, Y. Thu . "K-shell spectroscopy of silicon ions as diagnostic for high electric fields". United States. doi:10.1063/1.4767452.
@article{osti_22093984,
title = {K-shell spectroscopy of silicon ions as diagnostic for high electric fields},
author = {Loetzsch, R. and Jaeckel, O. and Hoefer, S. and Kaempfer, T. and Uschmann, I. and Kaluza, M. C. and Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena and Polz, J. and Foerster, E. and Stambulchik, E. and Kroupp, E. and Maron, Y.},
abstractNote = {We developed a detection scheme, capable of measuring X-ray line shape of tracer ions in {mu}m thick layers at the rear side of a target foil irradiated by ultra intense laser pulses. We performed simulations of the effect of strong electric fields on the K-shell emission of silicon and developed a spectrometer dedicated to record this emission. The combination of a cylindrically bent crystal in von Hamos geometry and a CCD camera with its single photon counting capability allows for a high dynamic range of the instrument and background free spectra. This approach will be used in future experiments to study electric fields of the order of TV/m at high density plasmas close to solid density.},
doi = {10.1063/1.4767452},
journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = 11,
volume = 83,
place = {United States},
year = {2012},
month = {11}
}