Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance

Journal Article · Sat Dec 15 00:00:00 EST 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4769805· OSTI ID:22089657

Feng, J. F.; Chen, J. Y.; Kurt, H.; Coey, J. M. D. ^[1]

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1. CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

Low frequency 1/f barrier noise has been investigated in sputtered MgO magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance ratio of up to 330% at room temperature. The lowest normalized noise parameter {alpha} of the tunnel barrier reaches 2.5 Multiplication-Sign 10{sup -12}-2.1 Multiplication-Sign 10{sup -11} {mu}m{sup 2}, which is comparable to that found in MTJs with the MgO barrier grown by MBE or electron-beam evaporation. This normalized barrier noise is almost bias independent in the voltage range of up to {+-}1.2 V. The low noise level and high voltage stability may reflect the high quality of the sputtered MgO with a uniform distribution of defects in the MgO layer.

• OSTI ID: 22089657
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DISTRIBUTION
ELECTRON BEAMS
EVAPORATION
LAYERS
MAGNESIUM OXIDES
MAGNETORESISTANCE
MOLECULAR BEAM EPITAXY
NOISE
SPUTTERING
STABILITY
SUPERCONDUCTING JUNCTIONS
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT
VACUUM COATING