Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark)
- CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby (Denmark)
- IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy)
- Sandia National Laboratories, MS-1056, Albuquerque, New Mexico 87185 (United States)
- Applied Materials, Gloucester, Massachusetts 01930 (United States)
The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Sign 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.
- OSTI ID:
- 22089655
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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