Energy band alignment of InGaZnO{sub 4}/Si heterojunction determined by x-ray photoelectron spectroscopy

Journal Article · Mon Dec 17 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4773299· OSTI ID:22089631

Zhangyi, Xie; Hongliang, Lu; Saisheng, Xu; Yang, Geng; Qingqing, Sun; Shijin, Ding; Zhang, David Wei ^[1]

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1. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 (China)

X-ray photoelectron spectroscopy was utilized to determine the valence band offset ({Delta}E{sub V}) of the InGaZnO{sub 4} (IGZO)/Si heterojunction. The IGZO films were grown on Si (100) using radio frequency magnetron sputtering. A value of {Delta}E{sub V} = 2.53 eV was obtained by using In 3d{sub 5/2}, Ga 2p{sub 3/2} core energy levels as references. Taking into consideration the experimental band gap of 3.20 eV of the IGZO, this would result in a conduction band offset {Delta}E{sub C} = 0.45 eV in this heterostructure.

• OSTI ID: 22089631
• Journal Information: Applied Physics Letters, Vol. 101, Issue 25; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALIGNMENT
DEPOSITION
ENERGY GAP
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
MAGNETRONS
OXYGEN COMPOUNDS
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC COMPOUNDS