2.8 {mu}m emission from type-I quantum wells grown on InAs{sub x}P{sub 1-x}/InP metamorphic graded buffers

Journal Article · Mon Dec 17 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4773024· OSTI ID:22089620

Jung, Daehwan; Song, Yuncheng; Larry Lee, Minjoo ^[1]; Lan, Yu; Wasserman, Daniel ^[2]

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1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
2. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

We report 2.8 {mu}m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAs{sub x}P{sub 1-x} step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 Multiplication-Sign 10{sup 6} cm{sup -2}. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 {mu}m with a narrow linewidth ({approx}50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.

• OSTI ID: 22089620
• Journal Information: Applied Physics Letters, Vol. 101, Issue 25; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
BUFFERS
DISLOCATIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
LASER RADIATION
MOLECULAR BEAM EPITAXY
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
RESOLUTION
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION