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Title: Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering

Abstract

The electrical and optical properties of Ta{sub x}Si{sub y}N{sub z} thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-Ta{sub x}Si{sub y}N{sub z} thin films were prepared: sub-stoichiometric Ta{sub x}Si{sub y}N{sub 0.44}, nearly stoichiometric Ta{sub x}Si{sub y}N{sub 0.5}, and over-stoichiometric Ta{sub x}Si{sub y}N{sub 0.56}. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the Ta{sub x}Si{sub y}N{sub z} films due to variations in the stoichiometry of the fcc-TaN{sub z} system and the addition of Si atoms. According to the nitrogen and silicon contents, fcc-Ta{sub x}Si{sub y}N{sub z} films can exhibit room temperature resistivity values ranging from 10{sup 2} {mu}{Omega} cm to about 6 Multiplication-Sign 10{supmore » 4} {mu}{Omega} cm. The interpretation of the experimental temperature-dependent resistivity data within the Grain Boundary Scattering model, combined with the results from optical investigations, showed that the mean electron transmission probability G and the free carriers concentration, N, are the main parameters that control the transport properties of these films. The results indicated that the correlation between electrical and optical measurements with the chemical composition and the nanostructure of the Ta{sub x}Si{sub y}N{sub z} thin films provides a pertinent and consistent description of the evolution of the Ta-Si-N system from a solid solution to a nanocomposite material due to the addition of Si atoms.« less

Authors:
;  [1]; ;  [2]
  1. Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Condensed Matter Physics (ICMP), CH-1015 Lausanne (Switzerland)
  2. Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, CU, Mexico D.F. 04510 (Mexico)
Publication Date:
OSTI Identifier:
22089612
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 11; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPOSITE MATERIALS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; FCC LATTICES; GRAIN BOUNDARIES; MAGNETRONS; NANOSTRUCTURES; NITROGEN; SILICON; SOLID SOLUTIONS; SPUTTERING; STOICHIOMETRY; TANTALUM; TEMPERATURE DEPENDENCE; THIN FILMS; TRANSMISSION; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA

Citation Formats

Oezer, D., Sanjines, R., Ramirez, G., and Rodil, S. E. Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering. United States: N. p., 2012. Web. doi:10.1063/1.4766904.
Oezer, D., Sanjines, R., Ramirez, G., & Rodil, S. E. Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering. United States. https://doi.org/10.1063/1.4766904
Oezer, D., Sanjines, R., Ramirez, G., and Rodil, S. E. 2012. "Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering". United States. https://doi.org/10.1063/1.4766904.
@article{osti_22089612,
title = {Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering},
author = {Oezer, D. and Sanjines, R. and Ramirez, G. and Rodil, S. E.},
abstractNote = {The electrical and optical properties of Ta{sub x}Si{sub y}N{sub z} thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-Ta{sub x}Si{sub y}N{sub z} thin films were prepared: sub-stoichiometric Ta{sub x}Si{sub y}N{sub 0.44}, nearly stoichiometric Ta{sub x}Si{sub y}N{sub 0.5}, and over-stoichiometric Ta{sub x}Si{sub y}N{sub 0.56}. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the Ta{sub x}Si{sub y}N{sub z} films due to variations in the stoichiometry of the fcc-TaN{sub z} system and the addition of Si atoms. According to the nitrogen and silicon contents, fcc-Ta{sub x}Si{sub y}N{sub z} films can exhibit room temperature resistivity values ranging from 10{sup 2} {mu}{Omega} cm to about 6 Multiplication-Sign 10{sup 4} {mu}{Omega} cm. The interpretation of the experimental temperature-dependent resistivity data within the Grain Boundary Scattering model, combined with the results from optical investigations, showed that the mean electron transmission probability G and the free carriers concentration, N, are the main parameters that control the transport properties of these films. The results indicated that the correlation between electrical and optical measurements with the chemical composition and the nanostructure of the Ta{sub x}Si{sub y}N{sub z} thin films provides a pertinent and consistent description of the evolution of the Ta-Si-N system from a solid solution to a nanocomposite material due to the addition of Si atoms.},
doi = {10.1063/1.4766904},
url = {https://www.osti.gov/biblio/22089612}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 112,
place = {United States},
year = {2012},
month = {12}
}