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Title: Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range

Abstract

Two relaxation processes have been identified in amorphous TiTaO thin films deposited by reactive magnetron sputtering. The parallel angle resolved x-ray photoelectron spectroscopy and field emission scanning electron microscopy analyses have shown that this material is composed of an agglomerates mixture of TiO{sub 2}, Ta{sub 2}O{sub 5}, and Ti-Ta bonds. The first relaxation process appears at low temperature with activation energy of about 0.26 eV and is related to the first ionisation of oxygen vacancies and/or the reduction of Ti{sup 4+} to Ti{sup 3+}. The second relaxation process occurs at high temperature with activation energy of 0.95 eV. This last peak is associated to the diffusion of the doubly ionized oxygen vacancies V{sub O}e. The dispersion phenomena observed at high temperature can be attributed to the development of complex defect such as (V{sub O}e - 2Ti{sup 3+}).

Authors:
;  [1];  [2];  [3]; ; ;  [4];  [5];  [6];  [7];  [1]
  1. Grenoble Electrical Engineering Laboratory (G2ELab), Joseph Fourier University (UJF), CNRS, G-INP, 25 Rue de Martyrs, BP 166, 38042 Grenoble Cedex 9 (France)
  2. (LMOP), Faculte des Sciences de Tunis, Universite Tunis El Manar, 2092 Tunis (Tunisia)
  3. Laboratoire des Sciences des Procedes et des Materiaux (LSPM)-CNRS-UPR3407, Universite Paris 13, 99 Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France)
  4. Institut des Materiaux Jean Rouxel-IMN-UMR CNRS 6502, Universite de Nantes, 2, rue de la Houssiniere, B.P. 32229, 44322 Nantes Cedex 3 (France)
  5. LTM, CNRS, University of Grenoble (UJF), CEA-LETI, Minatec, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France)
  6. Institut Neel, CNRS, 25 Rue des Martyrs, BP166, 38042 Grenoble Cedex 9 (France)
  7. Laboratoire Materiaux, Organisation et Proprietes (LMOP), Faculte des Sciences de Tunis, Universite Tunis El Manar, 2092 Tunis (Tunisia)
Publication Date:
OSTI Identifier:
22089571
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CRYSTAL DEFECTS; DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; FIELD EMISSION; IONIZATION; PERMITTIVITY; REDUCTION; RELAXATION; SCANNING ELECTRON MICROSCOPY; TANTALATES; TANTALUM OXIDES; THIN FILMS; TITANIUM COMPOUNDS; TITANIUM IONS; TITANIUM OXIDES; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Rouahi, A., Kahouli, A., Laboratoire Materiaux, Organisation et Proprietes, Challali, F., Besland, M. P., Salimy, S., Goullet, A., Vallee, C., Pairis, S., Yangui, B., and Sylvestre, A. Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range. United States: N. p., 2012. Web. doi:10.1063/1.4761980.
Rouahi, A., Kahouli, A., Laboratoire Materiaux, Organisation et Proprietes, Challali, F., Besland, M. P., Salimy, S., Goullet, A., Vallee, C., Pairis, S., Yangui, B., & Sylvestre, A. Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range. United States. doi:10.1063/1.4761980.
Rouahi, A., Kahouli, A., Laboratoire Materiaux, Organisation et Proprietes, Challali, F., Besland, M. P., Salimy, S., Goullet, A., Vallee, C., Pairis, S., Yangui, B., and Sylvestre, A. Thu . "Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range". United States. doi:10.1063/1.4761980.
@article{osti_22089571,
title = {Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range},
author = {Rouahi, A. and Kahouli, A. and Laboratoire Materiaux, Organisation et Proprietes and Challali, F. and Besland, M. P. and Salimy, S. and Goullet, A. and Vallee, C. and Pairis, S. and Yangui, B. and Sylvestre, A.},
abstractNote = {Two relaxation processes have been identified in amorphous TiTaO thin films deposited by reactive magnetron sputtering. The parallel angle resolved x-ray photoelectron spectroscopy and field emission scanning electron microscopy analyses have shown that this material is composed of an agglomerates mixture of TiO{sub 2}, Ta{sub 2}O{sub 5}, and Ti-Ta bonds. The first relaxation process appears at low temperature with activation energy of about 0.26 eV and is related to the first ionisation of oxygen vacancies and/or the reduction of Ti{sup 4+} to Ti{sup 3+}. The second relaxation process occurs at high temperature with activation energy of 0.95 eV. This last peak is associated to the diffusion of the doubly ionized oxygen vacancies V{sub O}e. The dispersion phenomena observed at high temperature can be attributed to the development of complex defect such as (V{sub O}e - 2Ti{sup 3+}).},
doi = {10.1063/1.4761980},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}