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Title: Influence of growth and annealing conditions on low-frequency magnetic 1/f noise in MgO magnetic tunnel junctions

Abstract

Magnetic 1/f noise is compared in magnetic tunnel junctions with electron-beam evaporated and sputtered MgO tunnel barriers in the annealing temperature range 350 - 425 Degree-Sign C. The variation of the magnetic noise parameter ({alpha}{sub mag}) of the reference layer with annealing temperature mainly reflects the variation of the pinning effect of the exchange-bias layer. A reduction in {alpha}{sub mag} with bias is associated with the bias dependence of the tunneling magnetoresistance. The related magnetic losses are parameterized by a phase lag {epsilon}, which is nearly independent of bias especially below 100 mV. The similar changes in magnetic noise with annealing temperature and barrier thickness for two types of MgO magnetic tunnel junctions indicate that the barrier layer quality does not affect the magnetic losses in the reference layer.

Authors:
; ; ; ;  [1]; ;  [2]
  1. CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)
  2. Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716 (United States)
Publication Date:
OSTI Identifier:
22089570
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; DEPOSITION; ELECTRON BEAMS; ELECTRONS; EXCHANGE INTERACTIONS; LAYERS; MAGNESIUM OXIDES; MAGNETORESISTANCE; NOISE; SPUTTERING; SUPERCONDUCTING JUNCTIONS; THICKNESS; TUNNEL EFFECT

Citation Formats

Feng Jiafeng, Diao Zhu, Kurt, Huseyin, Singh, A., Coey, J. M. D., Stearrett, Ryan, and Nowak, Edmund R. Influence of growth and annealing conditions on low-frequency magnetic 1/f noise in MgO magnetic tunnel junctions. United States: N. p., 2012. Web. doi:10.1063/1.4764314.
Feng Jiafeng, Diao Zhu, Kurt, Huseyin, Singh, A., Coey, J. M. D., Stearrett, Ryan, & Nowak, Edmund R. Influence of growth and annealing conditions on low-frequency magnetic 1/f noise in MgO magnetic tunnel junctions. United States. doi:10.1063/1.4764314.
Feng Jiafeng, Diao Zhu, Kurt, Huseyin, Singh, A., Coey, J. M. D., Stearrett, Ryan, and Nowak, Edmund R. Thu . "Influence of growth and annealing conditions on low-frequency magnetic 1/f noise in MgO magnetic tunnel junctions". United States. doi:10.1063/1.4764314.
@article{osti_22089570,
title = {Influence of growth and annealing conditions on low-frequency magnetic 1/f noise in MgO magnetic tunnel junctions},
author = {Feng Jiafeng and Diao Zhu and Kurt, Huseyin and Singh, A. and Coey, J. M. D. and Stearrett, Ryan and Nowak, Edmund R.},
abstractNote = {Magnetic 1/f noise is compared in magnetic tunnel junctions with electron-beam evaporated and sputtered MgO tunnel barriers in the annealing temperature range 350 - 425 Degree-Sign C. The variation of the magnetic noise parameter ({alpha}{sub mag}) of the reference layer with annealing temperature mainly reflects the variation of the pinning effect of the exchange-bias layer. A reduction in {alpha}{sub mag} with bias is associated with the bias dependence of the tunneling magnetoresistance. The related magnetic losses are parameterized by a phase lag {epsilon}, which is nearly independent of bias especially below 100 mV. The similar changes in magnetic noise with annealing temperature and barrier thickness for two types of MgO magnetic tunnel junctions indicate that the barrier layer quality does not affect the magnetic losses in the reference layer.},
doi = {10.1063/1.4764314},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}