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Title: Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs

Abstract

We report room temperature electronic and thermoelectric properties of Si-doped In{sub 0.52}Ga{sub 0.48}Bi{sub y}As{sub 1-y} with varying Bi concentrations. These films were grown epitaxially on a semi-insulating InP substrate by molecular beam epitaxy. We show that low Bi concentrations are optimal in improving the conductivity, Seebeck coefficient, and thermoelectric power factor, possibly due to the surfactant effects of bismuth. We observed a reduction in thermal conductivity with increasing Bi concentration, which is expected because of alloy scattering. We report a peak ZT of 0.23 at 300 K.

Authors:
; ; ;  [1];  [2]; ;  [3];  [4]
  1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States)
  2. Department of Chemical Engineering, University of Delaware, Newark, Delaware 19716 (United States)
  3. Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 2294 (United States)
  4. Sandia National Laboratories, P.O. Box 5800, M.S. 1069, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22089568
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ALLOYS; ARSENIC COMPOUNDS; BISMUTH COMPOUNDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; SCATTERING; SEEBECK EFFECT; SEMICONDUCTOR MATERIALS; SILICON ADDITIONS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES

Citation Formats

Dongmo, Pernell, Zhong Yujun, Bomberger, Cory, Zide, Joshua, Attia, Peter, Cheaito, Ramez, Hopkins, Patrick E., and Ihlefeld, Jon F. Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs. United States: N. p., 2012. Web. doi:10.1063/1.4761996.
Dongmo, Pernell, Zhong Yujun, Bomberger, Cory, Zide, Joshua, Attia, Peter, Cheaito, Ramez, Hopkins, Patrick E., & Ihlefeld, Jon F. Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs. United States. doi:10.1063/1.4761996.
Dongmo, Pernell, Zhong Yujun, Bomberger, Cory, Zide, Joshua, Attia, Peter, Cheaito, Ramez, Hopkins, Patrick E., and Ihlefeld, Jon F. Thu . "Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs". United States. doi:10.1063/1.4761996.
@article{osti_22089568,
title = {Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs},
author = {Dongmo, Pernell and Zhong Yujun and Bomberger, Cory and Zide, Joshua and Attia, Peter and Cheaito, Ramez and Hopkins, Patrick E. and Ihlefeld, Jon F.},
abstractNote = {We report room temperature electronic and thermoelectric properties of Si-doped In{sub 0.52}Ga{sub 0.48}Bi{sub y}As{sub 1-y} with varying Bi concentrations. These films were grown epitaxially on a semi-insulating InP substrate by molecular beam epitaxy. We show that low Bi concentrations are optimal in improving the conductivity, Seebeck coefficient, and thermoelectric power factor, possibly due to the surfactant effects of bismuth. We observed a reduction in thermal conductivity with increasing Bi concentration, which is expected because of alloy scattering. We report a peak ZT of 0.23 at 300 K.},
doi = {10.1063/1.4761996},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}