skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

Abstract

Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

Authors:
; ; ; ;  [1];  [2];  [3];  [2];  [1];  [2]
  1. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany)
  2. (Germany)
  3. Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany)
Publication Date:
OSTI Identifier:
22089566
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPRESSION STRENGTH; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INDIUM COMPOUNDS; INTERFACES; LATTICE PARAMETERS; LAYERS; NITROGEN COMPOUNDS; ORGANOMETALLIC COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; STRAINS; TENSILE PROPERTIES; THICKNESS; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION

Citation Formats

Reuters, Benjamin, Finken, M., Wille, A., Kalisch, H., Vescan, A., Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich, Hollaender, B., Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich, Heuken, M., and AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy. United States: N. p., 2012. Web. doi:10.1063/1.4764342.
Reuters, Benjamin, Finken, M., Wille, A., Kalisch, H., Vescan, A., Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich, Hollaender, B., Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich, Heuken, M., & AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy. United States. doi:10.1063/1.4764342.
Reuters, Benjamin, Finken, M., Wille, A., Kalisch, H., Vescan, A., Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich, Hollaender, B., Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich, Heuken, M., and AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath. Thu . "Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy". United States. doi:10.1063/1.4764342.
@article{osti_22089566,
title = {Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy},
author = {Reuters, Benjamin and Finken, M. and Wille, A. and Kalisch, H. and Vescan, A. and Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich and Hollaender, B. and Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich and Heuken, M. and AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath},
abstractNote = {Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.},
doi = {10.1063/1.4764342},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}