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Title: Ge/SrTiO{sub 3}(001): Correlation between interface chemistry and crystallographic orientation

Abstract

In this work, the desorption of a submonolayer deposit of Ge on SrTiO{sub 3}(001) is studied by reflection high energy electron diffraction. The results are compared to those of a previous experiment done using soft x-ray photoelectron spectroscopy. Combining these techniques allows for correlating interface chemistry and crystal orientation, and for bringing clarifying elements concerning the competition between (111) and (001) crystal orientation typical for the semiconductor/perovskite epitaxial systems. Despite poor interface matching, (111)-oriented islands are stabilized at the expense of (001)-oriented islands due to the relatively low energy of their free facets. Such 'surface energy driven' crystallographic orientation of the deposit is enhanced by the low adhesion energy characteristic of the Ge/SrTiO{sub 3} system.

Authors:
; ; ; ; ; ; ; ;  [1]; ; ;  [2]
  1. Universite de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France)
  2. Synchrotron SOLEIL (TEMPO beamline), l'Orme des Merisiers, Saint-Aubin, 91192 Gif-sur-Yvette (France)
Publication Date:
OSTI Identifier:
22089563
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ADHESION; CORRELATIONS; CRYSTALLOGRAPHY; DESORPTION; ELECTRON DIFFRACTION; EPITAXY; GERMANIUM; INTERFACES; LAYERS; MOLECULAR STRUCTURE; ORIENTATION; PEROVSKITE; REFLECTION; SOFT X RADIATION; STRONTIUM TITANATES; SURFACE ENERGY; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Gobaut, B., Penuelas, J., Grenet, G., Ferrah, D., Benamrouche, A., Chettaoui, A., Robach, Y., Botella, C., Saint-Girons, G., El Kazzi, M., Silly, M. G., and Sirotti, F. Ge/SrTiO{sub 3}(001): Correlation between interface chemistry and crystallographic orientation. United States: N. p., 2012. Web. doi:10.1063/1.4764510.
Gobaut, B., Penuelas, J., Grenet, G., Ferrah, D., Benamrouche, A., Chettaoui, A., Robach, Y., Botella, C., Saint-Girons, G., El Kazzi, M., Silly, M. G., & Sirotti, F. Ge/SrTiO{sub 3}(001): Correlation between interface chemistry and crystallographic orientation. United States. doi:10.1063/1.4764510.
Gobaut, B., Penuelas, J., Grenet, G., Ferrah, D., Benamrouche, A., Chettaoui, A., Robach, Y., Botella, C., Saint-Girons, G., El Kazzi, M., Silly, M. G., and Sirotti, F. Thu . "Ge/SrTiO{sub 3}(001): Correlation between interface chemistry and crystallographic orientation". United States. doi:10.1063/1.4764510.
@article{osti_22089563,
title = {Ge/SrTiO{sub 3}(001): Correlation between interface chemistry and crystallographic orientation},
author = {Gobaut, B. and Penuelas, J. and Grenet, G. and Ferrah, D. and Benamrouche, A. and Chettaoui, A. and Robach, Y. and Botella, C. and Saint-Girons, G. and El Kazzi, M. and Silly, M. G. and Sirotti, F.},
abstractNote = {In this work, the desorption of a submonolayer deposit of Ge on SrTiO{sub 3}(001) is studied by reflection high energy electron diffraction. The results are compared to those of a previous experiment done using soft x-ray photoelectron spectroscopy. Combining these techniques allows for correlating interface chemistry and crystal orientation, and for bringing clarifying elements concerning the competition between (111) and (001) crystal orientation typical for the semiconductor/perovskite epitaxial systems. Despite poor interface matching, (111)-oriented islands are stabilized at the expense of (001)-oriented islands due to the relatively low energy of their free facets. Such 'surface energy driven' crystallographic orientation of the deposit is enhanced by the low adhesion energy characteristic of the Ge/SrTiO{sub 3} system.},
doi = {10.1063/1.4764510},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}