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Title: SiN{sub x}-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

Abstract

We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiN{sub x} dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 Degree-Sign C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift.

Authors:
; ; ; ;  [1]; ;  [1];  [2]
  1. Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)
  2. (Ireland)
Publication Date:
OSTI Identifier:
22089555
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; ANNEALING; ARSENIC COMPOUNDS; COMPRESSIBILITY; DIELECTRIC MATERIALS; ENCAPSULATION; FILMS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; MASS SPECTRA; MASS SPECTROSCOPY; PHOTOLUMINESCENCE; QUANTUM WELLS; QUATERNARY ALLOY SYSTEMS; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT

Citation Formats

Lee, Ko-Hsin, Thomas, Kevin, Gocalinska, Agnieszka, Manganaro, Marina, Corbett, Brian, Pelucchi, Emanuele, Peters, Frank H., and Department of Physics, University College Cork, Cork. SiN{sub x}-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms. United States: N. p., 2012. Web. doi:10.1063/1.4764856.
Lee, Ko-Hsin, Thomas, Kevin, Gocalinska, Agnieszka, Manganaro, Marina, Corbett, Brian, Pelucchi, Emanuele, Peters, Frank H., & Department of Physics, University College Cork, Cork. SiN{sub x}-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms. United States. doi:10.1063/1.4764856.
Lee, Ko-Hsin, Thomas, Kevin, Gocalinska, Agnieszka, Manganaro, Marina, Corbett, Brian, Pelucchi, Emanuele, Peters, Frank H., and Department of Physics, University College Cork, Cork. Thu . "SiN{sub x}-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms". United States. doi:10.1063/1.4764856.
@article{osti_22089555,
title = {SiN{sub x}-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms},
author = {Lee, Ko-Hsin and Thomas, Kevin and Gocalinska, Agnieszka and Manganaro, Marina and Corbett, Brian and Pelucchi, Emanuele and Peters, Frank H. and Department of Physics, University College Cork, Cork},
abstractNote = {We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiN{sub x} dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 Degree-Sign C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift.},
doi = {10.1063/1.4764856},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}