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Title: Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

Abstract

A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

Authors:
;  [1];  [2];  [2];  [3]; ;  [4];  [2];  [2]
  1. Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
  2. (Canada)
  3. Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
  4. Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)
Publication Date:
OSTI Identifier:
22089554
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; BONDING; CRYSTAL GROWTH; DISLOCATIONS; DISTRIBUTION; FILMS; GALLIUM ANTIMONIDES; INTERFACES; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; PHASE STUDIES; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Hosseini Vajargah, S., Botton, G. A., Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1, Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1, Ghanad-Tavakoli, S., Preston, J. S., Kleiman, R. N., Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7, and Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy. United States: N. p., 2012. Web. doi:10.1063/1.4761970.
Hosseini Vajargah, S., Botton, G. A., Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1, Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1, Ghanad-Tavakoli, S., Preston, J. S., Kleiman, R. N., Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7, & Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy. United States. doi:10.1063/1.4761970.
Hosseini Vajargah, S., Botton, G. A., Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1, Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1, Ghanad-Tavakoli, S., Preston, J. S., Kleiman, R. N., Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7, and Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7. Thu . "Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy". United States. doi:10.1063/1.4761970.
@article{osti_22089554,
title = {Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy},
author = {Hosseini Vajargah, S. and Botton, G. A. and Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 and Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 and Ghanad-Tavakoli, S. and Preston, J. S. and Kleiman, R. N. and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 and Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7},
abstractNote = {A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.},
doi = {10.1063/1.4761970},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}