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Title: Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

Abstract

The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

Authors:
; ;  [1];  [2];  [2];  [3]; ;  [4];  [2];  [2]
  1. Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
  2. (Canada)
  3. Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
  4. Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)
Publication Date:
OSTI Identifier:
22089553
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNIHILATION; BEAMS; COALESCENCE; CRYSTAL DEFECTS; CRYSTALLOGRAPHY; DISTRIBUTION; EPITAXY; FILMS; GALLIUM ANTIMONIDES; INTERFACES; LAYERS; MOLECULAR STRUCTURE; PHASE STUDIES; RESOLUTION; SEMICONDUCTOR MATERIALS; SIMULATION; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Hosseini Vajargah, S., Woo, S. Y., Botton, G. A., Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1, Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1, Ghanad-Tavakoli, S., Kleiman, R. N., Preston, J. S., Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7, and Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy. United States: N. p., 2012. Web. doi:10.1063/1.4759160.
Hosseini Vajargah, S., Woo, S. Y., Botton, G. A., Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1, Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1, Ghanad-Tavakoli, S., Kleiman, R. N., Preston, J. S., Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7, & Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy. United States. doi:10.1063/1.4759160.
Hosseini Vajargah, S., Woo, S. Y., Botton, G. A., Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1, Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1, Ghanad-Tavakoli, S., Kleiman, R. N., Preston, J. S., Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7, and Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7. Thu . "Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy". United States. doi:10.1063/1.4759160.
@article{osti_22089553,
title = {Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy},
author = {Hosseini Vajargah, S. and Woo, S. Y. and Botton, G. A. and Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 and Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 and Ghanad-Tavakoli, S. and Kleiman, R. N. and Preston, J. S. and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 and Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7},
abstractNote = {The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.},
doi = {10.1063/1.4759160},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}