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Title: Fabrication and characterization of the gapless half-Heusler YPtSb thin films

Abstract

Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO{sub 2}/Si(001) substrates. X-ray diffraction pattern and energy dispersive X-ray spectroscopy confirmed the high-quality growth and stoichiometry. The temperature dependence of the resistivity shows a semiconducting-type behavior down to low temperature. The Hall mobility was determined to be 450 cm{sup 2}/V s at 300 K, which is much higher than the bulk value ({approx}300 cm{sup 2}/V s). In-plane magnetoresistance (MR) measurements with fields applied along and perpendicular to the current direction show opposite MR signs, which suggest the possible existence of the topological surface states.

Authors:
; ; ;  [1];  [2]
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
  2. State Key Laboratory of Metastable Material Sciences and Technology, Yanshan University of Technology, Qinhuangdao 066004 (China)
Publication Date:
OSTI Identifier:
22089546
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 10; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY COMPOUNDS; HEUSLER ALLOYS; MAGNESIUM OXIDES; MAGNETORESISTANCE; MAGNETRONS; PLATINUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SPUTTERING; STOICHIOMETRY; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; TERNARY ALLOY SYSTEMS; THIN FILMS; X RADIATION; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY; YTTRIUM COMPOUNDS

Citation Formats

Wang Wenhong, Du Yin, Liu Enke, Wu, G. H., and Liu Zhongyuan. Fabrication and characterization of the gapless half-Heusler YPtSb thin films. United States: N. p., 2012. Web. doi:10.1063/1.4766902.
Wang Wenhong, Du Yin, Liu Enke, Wu, G. H., & Liu Zhongyuan. Fabrication and characterization of the gapless half-Heusler YPtSb thin films. United States. doi:10.1063/1.4766902.
Wang Wenhong, Du Yin, Liu Enke, Wu, G. H., and Liu Zhongyuan. Thu . "Fabrication and characterization of the gapless half-Heusler YPtSb thin films". United States. doi:10.1063/1.4766902.
@article{osti_22089546,
title = {Fabrication and characterization of the gapless half-Heusler YPtSb thin films},
author = {Wang Wenhong and Du Yin and Liu Enke and Wu, G. H. and Liu Zhongyuan},
abstractNote = {Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO{sub 2}/Si(001) substrates. X-ray diffraction pattern and energy dispersive X-ray spectroscopy confirmed the high-quality growth and stoichiometry. The temperature dependence of the resistivity shows a semiconducting-type behavior down to low temperature. The Hall mobility was determined to be 450 cm{sup 2}/V s at 300 K, which is much higher than the bulk value ({approx}300 cm{sup 2}/V s). In-plane magnetoresistance (MR) measurements with fields applied along and perpendicular to the current direction show opposite MR signs, which suggest the possible existence of the topological surface states.},
doi = {10.1063/1.4766902},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}