skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices

Abstract

Motivated by the molecular-beam epitaxial growth of zinc-blend-type CrTe thin films on ZnTe, we present a theoretical study on the spin-polarized transport properties of ZnTe/CrTe p-n junction as spin diode and CrTe/ZnTe/CrTe magnetic tunnel junction for (001) and (011) surfaces. Both ZnTe(001)/CrTe(001) and ZnTe(011)/CrTe(011) p-n junctions show excellent spin diode effect, the majority spin current of positive voltage is much larger than that of negative voltage and the minority spin current is absolutely inhibited. The ZnTe(001)/CrTe(001) p-n junction has lower 'turn off' current and higher rectification ratio (about 10{sup 5}) than the ZnTe(011)/CrTe(011) which shows obvious anisotropy. We also find that the tunneling magneto resistance ratio of the CrTe/ZnTe/CrTe magnetic tunnel junction is up to about 4 Multiplication-Sign 10{sup 9}%.

Authors:
; ; ;  [1];  [1];  [2]
  1. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22089545
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 10; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; CHROMIUM TELLURIDES; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SPIN; SPIN ORIENTATION; SUPERCONDUCTING JUNCTIONS; SURFACES; THIN FILMS; TUNNEL EFFECT; ZINC; ZINC TELLURIDES

Citation Formats

Yao Wei, Gao, G. Y., Zhu, S. C., Fu, H. H., Yao, K. L., and International Center of Materials Physics, Chinese Academy of Science, Shenyang 110015. Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices. United States: N. p., 2012. Web. doi:10.1063/1.4767935.
Yao Wei, Gao, G. Y., Zhu, S. C., Fu, H. H., Yao, K. L., & International Center of Materials Physics, Chinese Academy of Science, Shenyang 110015. Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices. United States. doi:10.1063/1.4767935.
Yao Wei, Gao, G. Y., Zhu, S. C., Fu, H. H., Yao, K. L., and International Center of Materials Physics, Chinese Academy of Science, Shenyang 110015. Thu . "Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices". United States. doi:10.1063/1.4767935.
@article{osti_22089545,
title = {Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices},
author = {Yao Wei and Gao, G. Y. and Zhu, S. C. and Fu, H. H. and Yao, K. L. and International Center of Materials Physics, Chinese Academy of Science, Shenyang 110015},
abstractNote = {Motivated by the molecular-beam epitaxial growth of zinc-blend-type CrTe thin films on ZnTe, we present a theoretical study on the spin-polarized transport properties of ZnTe/CrTe p-n junction as spin diode and CrTe/ZnTe/CrTe magnetic tunnel junction for (001) and (011) surfaces. Both ZnTe(001)/CrTe(001) and ZnTe(011)/CrTe(011) p-n junctions show excellent spin diode effect, the majority spin current of positive voltage is much larger than that of negative voltage and the minority spin current is absolutely inhibited. The ZnTe(001)/CrTe(001) p-n junction has lower 'turn off' current and higher rectification ratio (about 10{sup 5}) than the ZnTe(011)/CrTe(011) which shows obvious anisotropy. We also find that the tunneling magneto resistance ratio of the CrTe/ZnTe/CrTe magnetic tunnel junction is up to about 4 Multiplication-Sign 10{sup 9}%.},
doi = {10.1063/1.4767935},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}