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Title: In situ investigation of ion-induced dewetting of a thin iron-oxide film on silicon by high resolution scanning electron microscopy

Abstract

Using our new in situ high resolution scanning electron microscope, which is integrated into the UNILAC ion beamline at the Helmholtzzentrum fuer Schwerionenforschung (GSI) in Darmstadt, Germany, we investigated the swift heavy ion induced dewetting of a thin iron oxide layer on Si. Besides heterogeneous hole nucleation at defects and spontaneous (homogeneous) hole nucleation, we could clearly identify a dewetting mechanism, which is similar to the spinodal dewetting observed for liquid films. Instead of being due to capillary waves, it is based on a stress induced surface instability. The latter results in the formation of a wavy surface with constant dominant wave-length and increasing amplitude during ion irradiation. Dewetting sets in as soon as the wave-troughs reach the film-substrate interface. Inspection of the hole radii and rim shapes indicates that removal of the material from the hole area occurs mainly by plastic deformation at the inner boundary and ion induced viscous flow in the peripheral zone due to surface tension.

Authors:
 [1];  [2]; ; ;  [1]
  1. Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart, 70569 Stuttgart (Germany)
  2. (India)
Publication Date:
OSTI Identifier:
22089544
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 10; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; AMPLITUDES; CAPILLARIES; CRYSTAL DEFECTS; HEAVY IONS; INSPECTION; INSTABILITY; ION BEAMS; IRON OXIDES; IRRADIATION; LIQUIDS; RESOLUTION; RESONANCE IONIZATION MASS SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; SURFACE TENSION; THIN FILMS; WAVELENGTHS

Citation Formats

Amirthapandian, S., Material Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Schuchart, F., Garmatter, D., and Bolse, W. In situ investigation of ion-induced dewetting of a thin iron-oxide film on silicon by high resolution scanning electron microscopy. United States: N. p., 2012. Web. doi:10.1063/1.4767068.
Amirthapandian, S., Material Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Schuchart, F., Garmatter, D., & Bolse, W. In situ investigation of ion-induced dewetting of a thin iron-oxide film on silicon by high resolution scanning electron microscopy. United States. doi:10.1063/1.4767068.
Amirthapandian, S., Material Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Schuchart, F., Garmatter, D., and Bolse, W. Thu . "In situ investigation of ion-induced dewetting of a thin iron-oxide film on silicon by high resolution scanning electron microscopy". United States. doi:10.1063/1.4767068.
@article{osti_22089544,
title = {In situ investigation of ion-induced dewetting of a thin iron-oxide film on silicon by high resolution scanning electron microscopy},
author = {Amirthapandian, S. and Material Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 and Schuchart, F. and Garmatter, D. and Bolse, W.},
abstractNote = {Using our new in situ high resolution scanning electron microscope, which is integrated into the UNILAC ion beamline at the Helmholtzzentrum fuer Schwerionenforschung (GSI) in Darmstadt, Germany, we investigated the swift heavy ion induced dewetting of a thin iron oxide layer on Si. Besides heterogeneous hole nucleation at defects and spontaneous (homogeneous) hole nucleation, we could clearly identify a dewetting mechanism, which is similar to the spinodal dewetting observed for liquid films. Instead of being due to capillary waves, it is based on a stress induced surface instability. The latter results in the formation of a wavy surface with constant dominant wave-length and increasing amplitude during ion irradiation. Dewetting sets in as soon as the wave-troughs reach the film-substrate interface. Inspection of the hole radii and rim shapes indicates that removal of the material from the hole area occurs mainly by plastic deformation at the inner boundary and ion induced viscous flow in the peripheral zone due to surface tension.},
doi = {10.1063/1.4767068},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}