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Title: Optimization of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} multilayers as transparent composite electrode on flexible substrate with high figure of merit

Abstract

Different multilayer structures of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} have been deposited onto flexible substrates by sputtering at room temperature to develop an indium free transparent composite electrode. The effect of Ag thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Ag morphology. The critical thickness of Ag to form a continuous conducting layer is found to be 9.5 nm. A new conduction mechanism has been proposed to describe the conduction before and after the critical thickness. The effective Hall resistivity of the optimized films is as low as 6.44 Multiplication-Sign 10{sup -5} Ohm-Sign -cm with a carrier concentration and mobility of 7.4 Multiplication-Sign 10{sup 21} cm{sup -3} and 13.1 cm{sup 2} /V-s, respectively, at the critical Ag layer thickness. The multilayer stack has been optimized to obtain a sheet resistance of 7.2 Ohm-Sign /sq and an average optical transmittance of 86% at 550 nm without any substrate heating or post-annealing process. The Haacke figure of merit (FOM) has been calculated for the films, and the multilayer with a 9.5 nm thick Ag layer has the highest FOM at 31.5 Multiplication-Sign 10-3 {Omega}{sup -1}, which is one of the highest FOMmore » values reported for TCE deposited at room temperature on a flexible substrate.« less

Authors:
 [1];  [2]
  1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287 (United States)
  2. School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States)
Publication Date:
OSTI Identifier:
22089538
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 112; Journal Issue: 10; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CARRIER DENSITY; COMPOSITE MATERIALS; DEPOSITION; ELECTRIC CONDUCTIVITY; LAYERS; NIOBIUM OXIDES; OPTICAL PROPERTIES; OPTIMIZATION; SILVER; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THICKNESS; THIN FILMS

Citation Formats

Dhar, Aritra, and Alford, T. L. Optimization of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} multilayers as transparent composite electrode on flexible substrate with high figure of merit. United States: N. p., 2012. Web. doi:10.1063/1.4767662.
Dhar, Aritra, & Alford, T. L. Optimization of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} multilayers as transparent composite electrode on flexible substrate with high figure of merit. United States. doi:10.1063/1.4767662.
Dhar, Aritra, and Alford, T. L. Thu . "Optimization of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} multilayers as transparent composite electrode on flexible substrate with high figure of merit". United States. doi:10.1063/1.4767662.
@article{osti_22089538,
title = {Optimization of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} multilayers as transparent composite electrode on flexible substrate with high figure of merit},
author = {Dhar, Aritra and Alford, T. L.},
abstractNote = {Different multilayer structures of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} have been deposited onto flexible substrates by sputtering at room temperature to develop an indium free transparent composite electrode. The effect of Ag thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Ag morphology. The critical thickness of Ag to form a continuous conducting layer is found to be 9.5 nm. A new conduction mechanism has been proposed to describe the conduction before and after the critical thickness. The effective Hall resistivity of the optimized films is as low as 6.44 Multiplication-Sign 10{sup -5} Ohm-Sign -cm with a carrier concentration and mobility of 7.4 Multiplication-Sign 10{sup 21} cm{sup -3} and 13.1 cm{sup 2} /V-s, respectively, at the critical Ag layer thickness. The multilayer stack has been optimized to obtain a sheet resistance of 7.2 Ohm-Sign /sq and an average optical transmittance of 86% at 550 nm without any substrate heating or post-annealing process. The Haacke figure of merit (FOM) has been calculated for the films, and the multilayer with a 9.5 nm thick Ag layer has the highest FOM at 31.5 Multiplication-Sign 10-3 {Omega}{sup -1}, which is one of the highest FOM values reported for TCE deposited at room temperature on a flexible substrate.},
doi = {10.1063/1.4767662},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}