A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

Journal Article · Mon Nov 19 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4764520· OSTI ID:22089516

Rong, Shan ^[1]; Ouardi, Siham; Fecher, Gerhard H.; ViolBarbosa, Carlos E.; Felser, Claudia ^[2]; Li, Gao; Kellock, Andrew; Parkin, Stuart S. P. ^[3]; Gloskovskii, Andrei ^[1]; Ikenaga, Eiji ^[4]

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1. Institut fuer Anorganische und Analytische Chemie, Johannes Gutenberg - Universitaet, 55099 Mainz (Germany)
2. Max Planck Institute for Chemical Physics of Solids, 01187 Dresden (Germany)
3. IBM Almaden Research Center, San Jose, California 95120 (United States)
4. Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Hyogo 679-5198 (Japan)

Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value (3.03). The electronic structure of NiYBi was calculated using wien2k, and a narrow indirect band gap of width of 210 meV was found. The valence band spectra of the films obtained by linear dichroism in hard x-ray photoelectron spectroscopy exhibit clear structures that are in good agreement with the calculated band structure of NiYBi.

• OSTI ID: 22089516
• Journal Information: Applied Physics Letters, Vol. 101, Issue 21; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH COMPOUNDS
DEPOSITION
DICHROISM
DIFFRACTION
ELECTRONIC STRUCTURE
EPITAXY
HARD X RADIATION
HEUSLER ALLOYS
LAYERS
MAGNESIUM OXIDES
MAGNETRONS
NICKEL COMPOUNDS
P-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
SPECTRA
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
YTTRIUM COMPOUNDS