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Title: Homogeneous pinhole free 1 nm Al{sub 2}O{sub 3} tunnel barriers on graphene

Abstract

We report on the topographical and electrical characterisations of 1 nm thick Al{sub 2}O{sub 3} dielectric films on graphene. The Al{sub 2}O{sub 3} is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O{sub 2} atmosphere. The Al{sub 2}O{sub 3} layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al{sub 2}O{sub 3} by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed.

Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau (France) and University of Paris-Sud, 91405 Orsay (France)
Publication Date:
OSTI Identifier:
22089512
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 20; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; DEPOSITION; DIELECTRIC MATERIALS; GRAPHENE; INJECTION; LAYERS; SPIN; SPUTTERING; THIN FILMS; TUNNEL EFFECT

Citation Formats

Dlubak, B., Martin, M.-B., Deranlot, C., Bouzehouane, K., Fusil, S., Mattana, R., Petroff, F., Anane, A., Seneor, P., and Fert, A. Homogeneous pinhole free 1 nm Al{sub 2}O{sub 3} tunnel barriers on graphene. United States: N. p., 2012. Web. doi:10.1063/1.4765348.
Dlubak, B., Martin, M.-B., Deranlot, C., Bouzehouane, K., Fusil, S., Mattana, R., Petroff, F., Anane, A., Seneor, P., & Fert, A. Homogeneous pinhole free 1 nm Al{sub 2}O{sub 3} tunnel barriers on graphene. United States. doi:10.1063/1.4765348.
Dlubak, B., Martin, M.-B., Deranlot, C., Bouzehouane, K., Fusil, S., Mattana, R., Petroff, F., Anane, A., Seneor, P., and Fert, A. Mon . "Homogeneous pinhole free 1 nm Al{sub 2}O{sub 3} tunnel barriers on graphene". United States. doi:10.1063/1.4765348.
@article{osti_22089512,
title = {Homogeneous pinhole free 1 nm Al{sub 2}O{sub 3} tunnel barriers on graphene},
author = {Dlubak, B. and Martin, M.-B. and Deranlot, C. and Bouzehouane, K. and Fusil, S. and Mattana, R. and Petroff, F. and Anane, A. and Seneor, P. and Fert, A.},
abstractNote = {We report on the topographical and electrical characterisations of 1 nm thick Al{sub 2}O{sub 3} dielectric films on graphene. The Al{sub 2}O{sub 3} is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O{sub 2} atmosphere. The Al{sub 2}O{sub 3} layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al{sub 2}O{sub 3} by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed.},
doi = {10.1063/1.4765348},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 101,
place = {United States},
year = {2012},
month = {11}
}