Structural, morphological, and magnetic characterization of In{sub 1-x}Mn{sub x}As quantum dots grown by molecular beam epitaxy
Abstract
In this paper, we present a method to order low temperature (LT) self-assembled ferromagnetic In{sub 1-x}Mn{sub x}As quantum dots (QDs) grown by molecular beam epitaxy (MBE). The ordered In{sub 1-x}Mn{sub x}As QDs were grown on top of a non-magnetic In{sub 0.4}Ga{sub 0.6}As/GaAs(100) QDs multi-layered structure. The modulation of the chemical potential, due to the stacking, provides a nucleation center for the LT In{sub 1-x}Mn{sub x}As QDs. For particular conditions, such as surface morphology and growth conditions, the In{sub 1-x}Mn{sub x}As QDs align along lines like chains. This work also reports the characterization of QDs grown on plain GaAs(100) substrates, as well as of the ordered structures, as function of Mn content and growth temperature. The substitutional Mn incorporation in the InAs lattice and the conditions for obtaining coherent and incoherent structures are discussed from comparison between Raman spectroscopy and x-ray analysis. Ferromagnetic behavior was observed for all structures at 2 K. We found that the magnetic moment axis changes from [110] in In{sub 1-x}Mn{sub x}As over GaAs to [1-10] for the ordered In{sub 1-x}Mn{sub x}As grown over GaAs template.
- Authors:
-
- Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, Sao Carlos 13560-970, SP (Brazil)
- Instituto de Fisica, Universidade de Brasilia, Brasilia 70919-970, DF (Brazil)
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
- Publication Date:
- OSTI Identifier:
- 22089386
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 112; Journal Issue: 3; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; ARSENIC COMPOUNDS; FERROMAGNETIC MATERIALS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM COMPOUNDS; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; MANGANESE; MANGANESE COMPOUNDS; MODULATION; MOLECULAR BEAM EPITAXY; NUCLEATION; QUANTUM DOTS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SUBSTRATES; SURFACES; X RADIATION
Citation Formats
Ferri, F. A., Marega, E. Jr., Coelho, L. N., Kunets, V. P., and Salamo, G. J. Structural, morphological, and magnetic characterization of In{sub 1-x}Mn{sub x}As quantum dots grown by molecular beam epitaxy. United States: N. p., 2012.
Web. doi:10.1063/1.4745904.
Ferri, F. A., Marega, E. Jr., Coelho, L. N., Kunets, V. P., & Salamo, G. J. Structural, morphological, and magnetic characterization of In{sub 1-x}Mn{sub x}As quantum dots grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.4745904
Ferri, F. A., Marega, E. Jr., Coelho, L. N., Kunets, V. P., and Salamo, G. J. 2012.
"Structural, morphological, and magnetic characterization of In{sub 1-x}Mn{sub x}As quantum dots grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.4745904.
@article{osti_22089386,
title = {Structural, morphological, and magnetic characterization of In{sub 1-x}Mn{sub x}As quantum dots grown by molecular beam epitaxy},
author = {Ferri, F. A. and Marega, E. Jr. and Coelho, L. N. and Kunets, V. P. and Salamo, G. J.},
abstractNote = {In this paper, we present a method to order low temperature (LT) self-assembled ferromagnetic In{sub 1-x}Mn{sub x}As quantum dots (QDs) grown by molecular beam epitaxy (MBE). The ordered In{sub 1-x}Mn{sub x}As QDs were grown on top of a non-magnetic In{sub 0.4}Ga{sub 0.6}As/GaAs(100) QDs multi-layered structure. The modulation of the chemical potential, due to the stacking, provides a nucleation center for the LT In{sub 1-x}Mn{sub x}As QDs. For particular conditions, such as surface morphology and growth conditions, the In{sub 1-x}Mn{sub x}As QDs align along lines like chains. This work also reports the characterization of QDs grown on plain GaAs(100) substrates, as well as of the ordered structures, as function of Mn content and growth temperature. The substitutional Mn incorporation in the InAs lattice and the conditions for obtaining coherent and incoherent structures are discussed from comparison between Raman spectroscopy and x-ray analysis. Ferromagnetic behavior was observed for all structures at 2 K. We found that the magnetic moment axis changes from [110] in In{sub 1-x}Mn{sub x}As over GaAs to [1-10] for the ordered In{sub 1-x}Mn{sub x}As grown over GaAs template.},
doi = {10.1063/1.4745904},
url = {https://www.osti.gov/biblio/22089386},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 3,
volume = 112,
place = {United States},
year = {Wed Aug 01 00:00:00 EDT 2012},
month = {Wed Aug 01 00:00:00 EDT 2012}
}