Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

Journal Article · Mon Jul 30 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4739835· OSTI ID:22089325

Park, K. W. ^[1]; Park, C. Y. ^[2]; Lee, Y. T. ^[1]

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1. School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
2. Micro Systems Laboratory, Samsung Advanced Institute of Technology, Yongin 446-712 (Korea, Republic of)

Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.

• OSTI ID: 22089325
• Journal Information: Applied Physics Letters, Vol. 101, Issue 5; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTRA
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFRARED SPECTRA
LAYERS
MOLECULAR BEAM EPITAXY
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SUBSTRATES
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA